نتایج جستجو برای: alas
تعداد نتایج: 1657 فیلتر نتایج به سال:
The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum ...
We report the molecular beam epitaxy growth of low-density strain-induced InAs quantum dots sQDd embedded in an AlAs/GaAs distributed Bragg reflector structure for a triggered photon source. By optimal selection of growth temperature, InAs deposited thickness and other experimental parameters, it is possible to grow low density s10/mm2d InAs quantum dots with a suitable emission wavelength for ...
The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its i...
The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at ...
The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (113)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through AFM and X-Ray diffraction structural analysis. The thermal conductivity (2.7W/mK at 300K) measured by the 3w method reveals to be clearly reduced in co...
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in this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a gaas/alas spherical quantum dot has been calculated. the perturbation method has been used within the framework of effective mass approximation for these calculations. overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...
Inducible hepatic porphyrias are inherited genetic disorders of enzymes of heme biosynthesis. The main clinical manifestations are acute attacks of neuropsychiatric symptoms frequently precipitated by drugs, hormones, or fasting, associated with increased urinary excretion of delta-aminolevulinic acid (ALA). Acute attacks are treated by heme infusion and glucose administration, but the mechanis...
Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were grown on semi-insulating GaAs substrate. AlAs layers have served as diffusion barriers for Bi atoms, and the size of the nanoclusters which nucleated after s...
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