Epitaxial growth of yttria-stabilized zirconia (YSZ) thin film on through-hole-type porous silicon [tht-PSi(001)] with vertical pores penetrating from the surface to back side Si(001) substrate was achieved. The in-plane and out-of-plane lattice parameters YSZ deposited tht-PSi(001) were, respectively 0.5167 0.5124 nm. Therefore, 0.54 % tensile strain applied film. Also for this work, an all ep...