Mitsubishi Electric has developed a 1.7 kV hybrid SiC power module consisting of 6th generation Si-IGBT and SiC Schottky Barrier Diode (SBD). Adopting SiC-SBD enables a significant power loss reduction during the diode turn-off and IGBT turn-on. And adopting of 6th generation IGBT enables the reduction of the IGBT turn-off loss. By using the newly developed chip set, high temperature enduring g...

I A reliable device model is crucial for the development d implementation of a circuit design. However, the sation of a high quality model requires a significant lount of timeand money. The software package presented this paper seeks to minimize the timeand money invested the realization of a high quality model for SiC Schottky, erged PiN Schottky, and PiN Power diodes based on cNutt and Mantoo...

Abstract: In this study Al-5 (Vol) % SiCp nanocomposite powder has been successfully synthesized by high-energy planetary milling of Al and SiC powders for a period of 25 h at a ball-to-powder ratio of 15:1. The changes of the lattice strain, the crystallite size of the matrix phase, and the nanocomposite powder microstructure with time have been investigated by X-ray diffraction (XRD), X-ray m...

This paper focused on evaluation of machining parameters influencing thrust force during drilling of Al–SiC–Gr metal matrix composites using multifaceted carbide drills. There are three machining parameters i.e. Spindle speed, Feed rate, Drill diameter. Experiments are conducted on a vertical machining centre using Taguchi design of experiments. Taguchi orthogonal array is designed with three l...

To form a memory cell, it is essential to epitaxially grow high quality pnp stack 3C SiC on Si. It requires a SiC seed, p type, n-type and p type 3C-SiC to be realized. The distributions of the elements in the film will be largely decided by the processes performed for the different purposes. To verify the distribution of the elements with depth, SIMS can be a sensitive and informative techniqu...