We have performed first principles electronic structure calculations to investigate the structural and magnetic properties of Fe/ZnSe(001) interfaces. Calculations involving full geometry optimizations have been carried out for a broad range of thickness of Fe layers(0.5 monolayer to 10 monolayers) on top of a ZnSe(001) substrate. Both Zn and Se terminated interfaces have been explored. Total e...

High crystalline quality ZnBeSe epilayers with di!erent compositions were grown on GaAs substrates by molecular beam epitaxy using Be}Zn co-irradiation of the III}V surface and a ZnSe bu!er layer. A (1]2) re#ection high-energy electron di!raction pattern was formed after the Be}Zn co-irradiation indicating the formation of Be and Zn dimers on the GaAs surface. A two-dimensional growth mode was ...

This report describes an extensive data set on the refractive index of ZnSe that provides full high resolution coverage of the CRIRES operating range in both wavelength and temperature. By combining our prototype instrument model of CRIRES with these data our project to provide wavelength calibration for IR Echelle spectrographs (WIRE) has reached an important milestone and is ready to support ...

In this paper, highly stable violet-blue emitting ZnSe/ZnS core/shell QDs have been synthesized by a novel "low temperature injection and high temperature growth" method. The resulting nearly monodisperse ZnSe/ZnS core/shell QDs exhibit excellent characteristics such as a high color saturation (typical spectral full width at half-maximum between 12 and 20 nm), good emission tunability in the vi...

The Kerr-lens mode locking ability and the ultrashort pulse characteristics are analyzed numerically for the Cr-doped ZnTe, ZnSe, ZnS active media. The advantages of these materials for the femtosecond lasing within 2-3 µm spectral range are demonstrated.

Functionalisation of PAMAM dendrimers with a small number of thiol groups makes them good ligands for CdSe/ZnSe nanoparticles; the particles coated with thiolated dendrimers have good cell permeability and are potent transfection agents.

An epitaxial lift-off technique for removing wide bandgap II–VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have develop...

The Kerr-lens mode locking stability and the ultrashort pulse characteristics are analyzed numerically for the Cr-doped ZnTe, ZnSe, ZnS active media. The advantages of these materials for the femtosecond lasing within 2-3 µm spectral range are demonstrated.

In this work, we fabricated the antireflection microstructures (ARMs) on ZnSe surfaces using a femtosecond Bessel direct laser writing in burst mode. The morphology and transmittance performance of ARMs with different single-pulse energies (from 200 nJ to 500 nJ), modes (burst 1, 3, 5 modes), periods 3 μm 6 μm), arrangements were investigated. results revealed that tetragonally arranged by ener...

Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program used to evaluate results. In both known developing film photovoltaic systems, CdS thin–film buffer is frequently employed traditional n–type heterojunction partner. this study, numerical simulation det...