The sol-gel method produces amorphous or crystalline thin gel films of metallic solid compounds by solidifying a sol formed by hydrolyzing and polymerizing a solution containing metallic compounds. Sol-gel processes are widely employed in the field of chemistry to prepare ceramic powders and thin films of hafnium oxide (HfO2) (Nishide et al., 2000) and zirconium oxide (ZrO2) ( Liu et al., 2002)...

Introduction: Antimonide (Sb) based quantum-well (QW) heterostructures such as InAsSb and InGaSb are of interest for III-V CMOS due to their superior electron and hole transport properties, and ability to be grown on a common metaphoric buffer [1-2]. However, a major challenge towards realizing Sb-based complementary MOSFET technology is the successful integration of a high-κ gate dielectric. S...

HfO2-based resistive oxide memories are studied by core-level spectromicroscopy using a laboratory-based X-ray photoelectron emission microscope (XPEEM). After forming, the top electrode is thinned to about 1 nm for the XPEEM analysis, making the buried electrode/HfO2 interface accessible whilst preserving it from contamination. The results are obtained in the true photoemission channel mode fr...

We report on the laser damage resistance of ion beam-sputtered oxide materials (Al2O3, Nb2O5, HfO2, SiO2, Ta2O5, ZrO2) and mixtures of Al2O3-SiO2, Nb2O5-SiO2, HfO2-SiO2, Ta2O5-SiO2, and ZrO2-SiO2, irradiated by single 500 fs pulses at 1030 nm. Laser-induced damage threshold (LIDT), refractive index, and bandgaps of the single-layer coatings are measured. For pure oxide materials a linear evolut...

Zirconia ZrO2 and hafnia HfO2 are leading candidates for replacing SiO2 as the gate insulator in complementary metal-oxide semiconductor technology. Amorphous versions of these materials a-ZrO2 and a-HfO2 can be grown as metastable phases on top of a silicon buffer; while they tend to recrystallize during subsequent annealing steps, they would otherwise be of considerable interest because of th...

Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/S...

1566-1199/$ see front matter 2010 Elsevier B.V doi:10.1016/j.orgel.2010.07.026 * Corresponding author at: Department of Elec Engineering, The Ohio State University, Columbus, +1 614 247 6235; fax: +1 614 292 7596. E-mail address: [email protected] (P.R. Berger). Here we report on low-supply voltage and high-performance regioregular poly-(3-hexythiophene) (P3HT) organic thin-film transistors (OTF...

Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate @Hf(NO3)4# . Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth and uniform initiation of film growth has be...

The low-frequency LF noise performance of nand p-channel metal-oxide-semiconductor field-effect transistors MOSFETs with different Hf-based gate oxides, deposited by metallorganic chemical vapor deposition MOCVD on the same interfacial oxide layer and using polysilicon poly-Si as a gate material has been investigated. Independent of the gate oxide, the LF noise spectra of nand p-MOSFETs are pre...