A new endurance test-pattern generation on NAND-flash memory is proposed to improve test cost. We mainly focus on the correlation between the data-pattern and the device error-rate during endurance testing. The novelty is the development of testing method using quasi-random pattern based on device architectures in order to increase the test efficiency during time-consuming endurance testing. It...

Compression is widely used in storage systems to reduce the amount of data that is written to physical storage devices, in order to improve both bandwidth and price per GB. In SSDs, which use NAND flash devices, compression also helps to improve endurance, which is limited to a fixed number of raw bytes written to the media, and to reduce garbage-collection overheads. Compression is typically i...

NAND flash memories represent a key storage technology for solid-state storage systems. However, they su↵er from serious reliability and endurance issues that must be mitigated by the use of proper error correction codes. This paper proposes the design and implementation of an optimized BoseChaudhuri-Hocquenghem hardware codec core able to adapt its correction capability in a range of predefine...

Conventional techniques for recovering deleted files often prove useless in recovering files in general and video files in particular, from downloads of the raw memory data from mobile telephones (containing NAND flash memory). Several factors that are relied upon conventionally do not occur in mobile telephones. This paper presents an approach for recovering deleted files in general and video ...

Abstract NAND flash memory is one of the most aggressively scaled technologies among electronic devices recently. The massive increase in the capacity makes flash memory possible for enterprise applications, such as the database system. However, the characteristic of erase-before-write makes flash memory very challenging for the database management. A non-in-place update technique may be exploi...

There are two primary types of NAND flash technology: Single-level cell and multilevel cell. Multi-level cell was developed more recently, to achieve higher bit density, so that a much higher capacity flash chip could be created for a given die size. MLC might allow you to save cost for flash chips and save board space by reducing the number of chips you need. But before you rush to design MLC ...

We propose a new NAND programming scheme called the lazy reprogramming (LazyRS) which divides program operation into two stages, where second stage is delayed until it needed. LazyRS optimizes latency by skipping if not required. An idle interval before improves flash reliability as well. To maximize benefit of LazyRS, LazyRS-aware FTL adjusts length an dynamically over changing workload charac...

a BRDF (Bi-Directional Reflection Distribution Function) that measures the Modulation and Coding Techniques for Enhancing Flash Memory Endurance Such code is called an error correcting write-once memory code. rate-limited frameworks, that have treated packet loss, quantization error and delay separately. of magnitude greater than the typical clock-cycle time of the SSD the latency of sluggish N...

Memory devices based on floating-gate transistor have recently become dominant technology for non-volatile storage like USB flash drives, memory cards, solid-state disks, etc. In contrast to many communication channels, the errors observed in device use are not random but of special, mainly asymmetric, type. Integer codes which proved their efficiency cases with asymmetric can be applied succes...