نتایج جستجو برای: w band amplifier

تعداد نتایج: 346600  

Journal: :Optics express 2006
Chien-Hung Yeh Ming-Ching Lin Ting-Tsan Huang Kuei-Chu Hsu Cheng-Hao Ko Sien Chi

An S-band gain-clamped erbium-doped fiber amplifier module, employing a fiber Bragg grating to serve as a reflected element for lasing a saturated tone injected into the module by forward optical feedback method, is proposed and investigated experimentally. Moreover, the performance and behavior of the gain and noise figure in the proposed gain-clamped S-band fiber amplifier have also been disc...

Journal: :International Journal of Circuit Theory and Applications 2022

Generation of proper source/load-pull impedances for a selected active device is essential to design an RF power amplifier optimum gain and added efficiency. As they are obtained, these may not be realizable network functions over the desired frequency band yield input output matching networks amplifier. Therefore, in this paper, first, we introduce new method test if given impedance realizable...

2013
matthew sieth

We report on the development of W-band (75–110 GHz) heterodyne receiver technology for large-format astronomical arrays. The receiver system is designed to be both mass producible, so that the designs could be scaled to thousands of receiver elements, and modular. Most of the receiver functionality is integrated into compact monolithic microwave integrated circuit (MMIC) amplifier-based multich...

2011
S. J. Asztalos K. van Bibber John Clarke

The Axion Dark Matter eXperiment (ADMX) was designed to detect ultra-weakly interacting relic axion particles by searching for their conversion to microwave photons in a resonant cavity positioned in a strong magnetic field. Given the extremely low expected axion–photon conversion power we have designed, built and operated a microwave receiver based on a Superconducting QUantum Interference Dev...

2013
San-Fu Wang Jan-Ou Wu Chi-Chun Chen Yang-Hsin Fan

In this paper, a differential multi-band CMOS low noise amplifier (LNA), operated in a wide range from 800MHz~1700MHz, with wide-band interference rejection, linearity improvement and the capacitive cross-coupling technology, is proposed. The proposed differential multi-band CMOS low noise amplifier with high linearity performance and good interference rejection performance. The post-simulation...

2010
Inderpreet Kaur Neena Gupta

Wavelength multiplexing (WDM) technology along with optical amplifiers is used for optical communication systems in S-band, C-band and L-band. To improve the overall system performance Hybrid amplifiers consisting of cascaded TDFA and EDFA with different gain bandwidths are preferred for long haul wavelength multiplexed optical communication systems. This paper deals with statistical analysis o...

2008
Yasushi Itoh

L-band SiGe HBT differential amplifiers with multiple bandpass or bandstop performance is presented. It incorporates stacked parallel-resonant circuits into the design of the output load of the differential amplifier to achieve multiple bandpass performance. On the other hand, the stacked parallel-resonant circuits are used between emitters of the differential transistor-pair to achieve multipl...

2015
Vibhash Rai Saket Kumar

This paper hearsay a unique cross-coupled current conveyor based cmos transimpedance amplifier with series inductive peaking design to achieve an input capacitive load insensitive, low noise and augment the bandwidth of transimpedance amplifier. The peaking inductor is in series with the capacitor constituting a dominant pole. It boosts the band width of the amplifier.The whole transimpedance a...

2010
Desheng Ma Fa Foster Dai Richard C. Jaeger David Irwin

In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...

2005
J. P. Conlon N. Zhang M. J. Poulton J. B. Shealy R. Vetury S. Gibb

Gallium Nitride (GaN) amplifiers have demonstrated very high power density as well as wide band width in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large band width. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4...

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