Middleware emerges as an excellent solution for the complicated distributed computing application. But as the appearance of new devices and new applications, the inflexibility of traditional middleware system becomes more serious and urgent. In this paper we propose a new flexible middleware platform which adopts the technologies of piped workflow and computational modules to provide a modular ...

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar...

Since the introduction of side-channel attacks in the nineties, RSA implementations have been a privileged target. A wide variety of countermeasures have been proposed and most of practical attacks are nowadays efficiently defeated by them. However, in a recent work published at ICICS 2010, Clavier et al. have pointed out that almost all the existing countermeasures were ineffective if the atta...

This study presents direct numerical simulations of natural convection for air (Pr = 0.709) in a vertical channel driven by differentially heated walls at Rayleigh numbers (Ra) up to 2.0 × 107. The present data is validated with that from Versteegh and Nieuwstadt [9] for Ra = 5.0 × 106. Using the present data for higher Ra, we appraise and compare the various proposed scaling laws for the mean ...

Abstract—This work deals with the problem of MHD mixed convection in a completely porous and differentially heated vertical channel. The model of Darcy-Brinkman-Forchheimer with the Boussinesq approximation is adopted and the governing equations are solved by the finite volume method. The effects of magnetic field and buoyancy force intensities are given by the Hartmann and Richardson numbers r...

 Abstract—This paper presents a short-channel subthreshold current model for the double gate (DG) MOSFET having Gaussian doping profile in the vertical direction of the channel. The present model is based on the assumption that diffusion is the dominant carrier transportation mechanism in the subthreshold regime of device operation. The effects of channel length and channel doping on subthresh...

The low complexity quantization of channel state information (CSI) and the utilization of vertical freedom of three dimension (3D) channels are two critical issues in the limited feedback design of the full dimension multi-input-multi-output (FD-MIMO) systems. In this paper, we propose an effective limited feedback scheme. We first employ Kronecker product based codebook (KPC) to explore the ve...