نتایج جستجو برای: tunneling field effect

تعداد نتایج: 2345540  

Journal: :Physical review letters 2006
I I Oleynik M A Kozhushner V S Posvyanskii L Yu

We investigated a mechanism of rectification in diblock oligomer diode molecules that have recently been synthesized and showed a pronounced asymmetry in the measured I-V spectrum. The observed rectification effect is due to the resonant nature of electron transfer in the system and the localization properties of bound state wave functions of resonant states of the tunneling electron interactin...

2011
Isabel Gonzalo Pedro Bargueño

We study the tunnel dynamics of a chiral molecule between its left (L) and right (R) conformations, under the global effect of collisional decoherence together with the effect of a mean-field generated by the environment where an energetic difference, K, between homochiral and heterochiral interactions is assumed. We show that this decoherence leads unavoidably to equal populations of the L and...

2014
Mingda Li David Esseni Gregory Snider Debdeep Jena Huili Grace Xing

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically, and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen’s transfer Hamiltonian, and including ...

Journal: :Nano letters 2009
Pei Zhao Jyotsna Chauhan Jing Guo

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass, and monolayer-thin body. In this work, we examine the device physics of p-i-n GNR tunneling FETs using atomistic q...

2004
I-Nan Lin Yi-Ping Chou Tong T. Chen

Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely rel...

2015
Yee Sin Ang Zhongshui Ma Chao Zhang

Ratchet is a device that produces direct current of particles when driven by an unbiased force. We demonstrate a simple scattering quantum ratchet based on an asymmetrical quantum tunneling effect in two-dimensional electron gas with Rashba spin-orbit interaction (R2DEG). We consider the tunneling of electrons across a square potential barrier sandwiched by interface scattering potentials of un...

Journal: :Physical Review A 2006

Journal: :IEEE Journal of the Electron Devices Society 2018

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