The purpose of this report is to place in proper perspective the role that the modern semiconductor diode lownoise amplifier and converter have in the amplification of extremely small signals. There is a discussion of the fundamental principles of parametric amplification, and a quantitive treatment which is valid in the limit of very high Q diodes. Design formulas from the literature are given...

In this paper, we propose a non-volatile SRAM, which presents simultaneously low power dissipation and high speed. This SRAM is based on MRAM (Magnetic RAM technology on standard CMOS. In this non-volatile SRAM design, we use Magnetic Tunnel Junctions (MTJ) as storage element. A 4-bit SRAM cell is designed and its read-write operations are described. Sense Amplifier is used in the read operatio...

We demonstrate a high-power Nd: YVO 4 picosecond laser amplifier that is capable of generating 51.5 W average output power at wavelength 1,064 nm, with repetition rate 70 MHz and pulse duration 8.5 ps. This system encompasses three stages diode end-pumped amplification including two double-pass amplifiers single-pass amplifier. Laser near-diffraction-limited beam quality ( M 2 < 1.1) was...

We present the microfabrication and cold test measurement results of serpentine waveguide amplifier circuits at 220 GHz. The circuits were fabricated using a novel embedded polymer monofilament technique combined with UltravioletLIGA to simultaneously create both the beam tunnel and interaction circuits. We find remarkable characteristic matches between the measurements of the best circuits, il...

The London penetration depth $$\lambda $$ is the basic length scale for electromagnetic behavior in a superconductor. Precise measurements of as function temperature, field and impurity scattering have been instrumental revealing nature order parameter pairing interactions variety superconductors discovered over past decades. Here we recount our development tunnel-diode resonator technique to m...