TiB2–TiC–Al2O3 and ZrB2–ZrC–Al2O3 composites were produced via PTFE (polytetrafluoroethene)-activated combustion synthesis involving low-exotherm thermites. The reactant stoichiometries 3TiO2 + 4Al 0.5B4C (1 ? x)C xCPTFE 3ZrO2 y)C yCPTFE. played a dual role in promoting the reaction carburizing reduced Ti Zr. threshold amount of for TiO2/Al-based was 2 wt% (i.e., x = 0.15) ZrO2/Al-based 3 y 0.2...

A theoretical investigation using density functional theory (DFT) has been carried out in order to understand the molecular mechanism of dihydrogen activation by means of transition metal dioxides MO2 (M = Ti, Zr, and Hf) according to the following reaction: MO2 + H2 → MO + H2O. B3LYP/6-311++G(2df,2pd)/SDD methodology was employed considering two possible reaction pathways. As the first step hy...

High-k gate dielectrics are used to suppress excessive transistor gate leakage and power consumption could speed up the introduction of metal gates in complementary metal oxide semiconductor (CMOS) transistors. Many new oxides are being evaluated as gate dielectrics, such as Al2O3, Y2O3, La2O3, Gd2O3, HfO2, ZrO2, and TiO2, BaZrO3, ZrSiO4 and HfSiO4. Ru, RuO2 and SrRuO3 gate electrodes grown on ...