In this contribution, the Co doped SnO2 transparent semi-conducting films are prepared by spray pyrolysis technique and the influence of N2-and Ar-ambient annealing on their structural, electrical and optical properties are studied. The SnO2:Co thin films were deposited on the glass substrate at substrate temperature of 480 ˚C using an aqueous-ethanol solution consisting of tin and cobalt chlor...

The low-noise solar-blind photodetectors of indium-tin-oxide/LaAlO(3)/Ag (ITO/LAO/Ag) have been fabricated based on the properties of LAO bandgap excitation and the transparent conductance of ITO thin film. The ITO thin films are epitaxially grown on LAO wafers as the electrodes and detection windows of the photodetectors. The photodetectors have low noise and excellent electromagnetic shieldin...

The steady-state photocurrent spectra of Sb2Se3 and Sb2Se3: Sn films in the photon energies ranged from 1 to 2.5 eV for different values of electric field intensity and temperatures were investigated. In the photocurrent spectra the peak near 1.5 eV, caused by the defect band, was revealed. For the amorphous Sb2Se3 thin film samples with tin impurity the intensity of this band is higher. In the...

The authors present a new method for preparing thin films of SnO2 by atomic layer deposition ALD using alternating exposures to tetrakis dimethylamino tin and hydrogen peroxide. This method avoids problems of corrosion and agglomeration associated with the halogenated compound, SnCl4. Tin oxide films were successfully deposited on a variety of substrates using deposition temperatures of 50–300 ...