نتایج جستجو برای: third power
تعداد نتایج: 720652 فیلتر نتایج به سال:
In the paper we give some theoretical and computational results on the third strong power of cycle-powers, for example, we have found the independence numbers α((C 10) ) = 30 and α((C 14) ) = 14. A number of optimizations have been introduced to improve the running time of our exhaustive algorithm used to establish the independence number of the third strong power of cycle-powers. Moreover, our...
We present a prospect theory model to explain why power transitions do not necessarily lead to war. We find that three major mechanisms prevent the occurrence of potential power transition wars. First, the dual boiling frog effects occurring in the middle range of capability catching-up rate prevent a dominant state from preempting and a rising state from challenging the other side. Second, div...
In this paper, the annual and economic performance of an integrated solar combined cycle (ISCC) with indirect energy storage tanks is investigated. The study includes four scenarios, in which the combined cycle performance was studied exclusively in the first scenario. In the second scenario, the integrated solar combined cycle (ISCC) was examined, and the use of supplementary firing instead of...
abstract main objective of this paper is to evaluate supportive policies of beef producers during the first, second, third and fourth terms of economic, social, and cultural development plans (1989 - 2008).to evaluate the policies, the producers support estimate(pse) index and other indicators (pse %, npc & nac) were used. furthermore, percentages of pse were calculated in different scenarios o...
218 IMPLEMENTATION OF THIRD HARMONICS INJECTION BY MATRIX CONVERTER P. Prakash*, M. Sathishkumar** & G. Sathishkumar*** Department of Electrical and Electronics Engineering, Gnanamani College of Technology, Tamilnadu Abstract: Due to the merits of sinusoidal input currents and excellent conversion efficiency, buck-type active third-harmonic injection converters have received increasing attentio...
This paper presents an efficient physics-based electro-thermal model that solves some advanced problems of modeling Silicon Carbide (SiC) power MOSFETs. It is the first simulates temperature dependency and third quadrant characteristics, including reverse recovery body diode accurately efficiently. extends from a previous work demonstrated isothermal gate-dependent diode. Physics-based scaling ...
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