The influence of MOCVD growth conditions (carrier gas, growth temperature, and V/III ratio) on the AlGaN barrier and the corresponding 2DEG for AlGaN/GaN heterostructures grown on 150 mm silicon is investigated. Hall mobility 2200 cm 2 /V.s, with sheet carrier concentration 8.7e10 12 cm -2 and sheet resistance 326 Ohm/sq, is obtained for AlGaN grown in N2 ambient and with high V/III ratios.

A GaInAsP photonic crystal slab microlaser with an integrated passive waveguide was fabricated by a MOCVD butt-joint regrowth process. The boundary between the active and passive regions was optimized for high light transmission. In addition, the edge of the waveguide was designed to output a narrow beam, and the light detection was improved. Consequently, a maximum output power of 0.17 mW was ...

Photonic receivers integrating unitravelling carrier (UTC) photodiodes with high saturation power=high gain semiconductor optical amplifiers (SOAs) are presented. The SOAs demonstrated up to 28 dB of gain with saturation output powers of up to 18.6 dBm, while the UTC photodiodes were capable of 40 Gbit=s operation under high photocurrent operation. The chip-coupled receiver sensitivity was bett...

In this work, the off-state characteristics of AlScN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and directly compared to an AlGaN- AlN-HEMT in same MOCVD. Pinch-off instability leaky capacitive measurements observed for AlScN-based HEMTs, which was correlated with a higher ideality factor lower effective potential barrier ...

High-quality β-Ga2O3 films were epitaxially grown by using metalorganic chemical vapor deposition (MOCVD) with different donor concentrations, and their shallow states investigated the temperature-dependent Hall measurement secondary ion mass spectroscopy (SIMS) analysis. Two levels ionization energies of ∼36 ∼140 meV extracted. It is found that unintentional doping (UID) effects in MOCVD contr...

We describe the fabrication and characterization of semi-insulating GaN devices for detection ionizing radiation with applications in high environment. present DC signal response such from Am-241 α -source. The detector prototypes show up to 80% charge collection efficiency bias voltages as low -40V. Wide band gap semiconductors like synthetic diamond, GaN, SiC have gained immense importance fi...

Abstract Metal–organic chemical vapour deposition (MOCVD) has become one of the most promising techniques for large-scale fabrication 2D transition metal dichalcogenide (TMDC) materials. Despite efforts devoted to development MOCVD TMDC monolayers, whole picture growth process not been fully unveiled yet. In this work, we employ a commercial AIXTRON CCS tool MoS 2 on sapphire using standard pre...