نتایج جستجو برای: thermal chemical vapor deposition

تعداد نتایج: 673952  

2014
A. Kuzminova J. Kratochvíl A. Shelemin O. Kylián H. Biederman J. Beranová

Silver containing nanocomposites receive increasing attention as antibacterial coatings. In this study we report on production of such materials using combination of gas aggregation sources of Ag nanoparticles and plasma enhanced chemical vapour deposition performed in HMDSO/O2 working gas mixtures. The main attention is devoted to the investigation of solubility of Ag nanoparticles in water in...

Journal: :Journal of the Japan Society for Precision Engineering 2016

Journal: :Dalton transactions 2008
Zhengwen Li Don Kuen Lee Michael Coulter Leonard N J Rodriguez Roy G Gordon

Three new volatile cobalt amidinate compounds were prepared: Co(tBuNC(R)NEt)2, R=Me, Et and n-Bu. They were characterized by elemental analysis, 1H NMR, X-ray structure analysis, melting point, vapor pressure, vaporization rate, thermal stability and chemical reactivity. They were found to evaporate cleanly without decomposition. Two of them are liquids at room temperature, allowing for more co...

2009
G. Miao A. Gupta

Single crystalline tin oxide (SnO2) nanowires have been synthesized by carbothermal reduction of SnO2 nanopowder followed by thermal evaporation of the reduced precursor and growth via the vapor-liquid-solid (VLS) growth mechanism. The nanowires are deposited on single crystalline TiO2 substrates of orientations of (100) and (110) that are coated with a thin film and colloids of gold (Au) catal...

2004
Yoke Khin Yap Vijaya Kayastha Steve Hackney Svetlana Dimovski Yury Gogotsi

We attempt to understand the fundamental factors that determine the growth rate of carbon nanotubes. In a series of experiments on growing multiwall carbon nanotubes (MWNTs) by thermal chemical vapor deposition, we found that the addition of carrier gas and the type of carrier gas can change the growth rate, growth density, and structures of MWNTs. We explain these results based on the dissocia...

Journal: :ACS nano 2010
Yu Wang Xiangfan Xu Jiong Lu Ming Lin Qiaoliang Bao Barbaros Özyilmaz Kian Ping Loh

We report a new route to prepare high quality, monolayer graphene by the dehydrogenation of graphane-like film grown by plasma-enhanced chemical vapor deposition. Large-area monolayer graphane-like film is first produced by remote-discharged radio frequency plasma beam deposition at 650 °C on Cu/Ti-coated SiO(2)-Si. The advantages of the plasma deposition include very short deposition time (<5 ...

Journal: :journal of nanostructures 2013
a. kabiri g. nabiyouni p. boroujerdian j. ghasemi a. fattahi

the aim of this research is preparation of sno2 nanowires by means of thermal chemical reaction vapor transport deposition (tcrvtd) method from sno powders. the morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (fe-sem), eds, and xrd. the xrd diffraction patterns reveal that the sno2 nanowires have...

2014
J. A. Weibel S. S. Kim S V. Garimella S. V. Garimella

Owing to their high intrinsic thermal conductivity, carbon nanotubes (CNTs) have previously been incorporated into a variety of thermal management applications to improve cooling performance. Implementation of controlled CNT growth techniques and functionalization methods are applied herein to enhance boiling heat transfer from the porous capillary wicking surfaces widely used in high heat flux...

2000
Yoshiko S. Hiraoka

Chemical vapor deposition (CVD) is one of the key technologies for the epitaxial crystal growth of semiconductors. In order to obtain high-performance devices, atomically controlled thin films are required. Layer by layer growth consists of various processes, i.e ., the thermal decomposition of precursors, the adsorption of growing species, their surface migration, two-dimensional nucleation, t...

1995
I. A. Shareef G. W. Rubloff M. Anderle W. N. Gill D. H. Kim

Ozone/TEOS thermal chemical vapor deposition ~CVD! has been investigated for SiO2 deposition on Si, using a cold-wall research reactor equipped to determine the effects of precursor concentration, deposition temperature ~300–500 °C!, and pressure ~30–200 Torr! on deposition rates, etch rates, and step coverage in the regime of subatmospheric CVD ~SACVD!. Deposition rates first increase with sub...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید