Abstract A variation in the α − β model which is a regression that allows deterministic prediction of extreme runout to be expected given path, was applied for calculating avalanche Catalan Pyrenees. Present knowledge major activity this region and current mapping tools were used. The derived using dataset 97 ‘extreme’ avalanches occurred from end 19th century beginning 21st century. multiple l...

We show that some widely accepted criteria for cryptographic functions, including the strict avalanche criterion (SAC) and the propagation criterion, have various limitations in capturing properties of vital importance to cryptographic algorithms, and propose a new criterion called GAC to measure the global avalanche characteristics of cryptographic functions. We also introduce two indicators r...

in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

The surficial deposits surrounding the Mount Meager volcanic complex include numerous avalanche deposits. These deposits share many attributes: (a) they are nearly monolithologic and comprise mainly intermediate volcanic rock clasts, (b) they lack internal structure, and (c) they are very poorly sorted. Despite these similarities, the avalanche deposits represent two distinct processes. Mass wa...

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy dur...

Two-tone intermodulation in ultrahigh vacuum/chemical vapor deposition SiGe heterojunction bipolar transistors (HBTs) were analyzed using a Volterra-series-based approach that completely distinguishes individual nonlinearities. Avalanche multiplication and collector–base (CB) capacitance were shown to be the dominant nonlinearities in a single-stage common-emitter amplifier. At a given , an opt...