The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. ...

White Spot Disease (WSD) is well known as a widespread viral disease in shrimps from 1992. Many studies focused on morphological, histopathological and epidemiological characteristic and pathogenecity of the disease but less on the determination of the severity of WSD using the histopathological features in target tissues. A generalized scheme for assigning a numerical qualitative value to sev...

Gasoline direct injection provides reduced engine emissions, increased power, and increased fuel economy as compared to port fuel injection (PFI). Reduced emissions are largely due to starting the engine using high fuel pressure (up to 150 bar) and injecting into the compression stroke. During a cold start, fuel pressure must be increased from lift pump pressure (typically 4 to 6 bar) to desire...

The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fab...

This work introduces the use of GradedChannel SOI MOSFETs to make analog current mirrors and compare their performance with those made with conventional fully depleted SOI transistors. It is demonstrated that Graded-Channel MOSFETs can provide higher precision current mirror with enhanced output swing. Also lesser modifications of the output characteristics due to the self-heating effect than i...

A current-mode output driver that supports SERDES applications is implemented using 0.13 μm Bulk and PD SOI CMOS technologies. Schematic simulation results confirm the enhanced performance of PD SOI for very high-speed interfaces. The PD SOI current-mode driver shows a 3 times lower data dependent jitter than the Bulk current-mode driver at the same 3.125 Gbps data rate of XAUI standard.

We report an avalanche-mode light-emitting transistor (AMLET) in silicon (Si), based on a lateral bipolar junction, which emits light near 760 nm optical wavelength with record low bandwidth of 38 nm. The AMLET, designed CMOS-compatible silicon-on-insulator (SOI) photonics platform, is optically confined within <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://w...

A new small-signal model for fully depleted silicon-oninsulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range ...