Two-layer Al/Nb (1000/200 nm) was deposited by sputtering using a DC magnetron method on Si wafers. The anodizing in 0.2 M oxalic solution at 53 V, re-anodized the 0.5 boric acid potentiodynamic mode increase of potential until 400 V. For forming anodic composite nanostructure, porous aluminum oxide partially removed 50 % aqueous phosphoric 50°C for 1200 s. morphology, photoluminescence, and op...

Crystal structures of the title compounds show diverse packing by interactions auxochromes giving materials with varied optoelectronic properties.