نتایج جستجو برای: silv

تعداد نتایج: 891  

Journal: :Optics express 2014
Mark A Hughes Manon A Lourenço J David Carey Ben Murdin Kevin P Homewood

We report the lattice site and symmetry of optically active Dy3+ and Tm3+ implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that ...

Journal: :The Journal of clinical investigation 1982
C J Parker P J Baker W F Rosse

To investigate the greater fixation of C3 to the erythrocytes of patients with paroxysmal nocturnal hemoglobinuria (PNH) upon activation of complement, we have examined the formation and the reaction of the C3 nephritic factor-stabilized alternative pathway convertase made with purified components on normal and PNH erythrocytes. Each convertase complex converts four to five times more fluid-pha...

Journal: :Dalton transactions 2016
Mei-Pin Liu Yan-Ping Luo Lei Xu Lin Sun Hong-Bin Du

Hollow-structured Si/SiC@C nanospheres were prepared through a magnesiothermic reduction of resin-coated SiO2 spheres. These nanostructured materials with high surface area not only show high adsorption capacities of industrial dyes from wastewater, but also exhibit excellent catalytic activities for chemical fixation of CO2 under mild, solvent-free conditions.

Journal: :Langmuir : the ACS journal of surfaces and colloids 2004
Kevin S Schneider Wei Lu Daniel R Fosnacht B G Orr Mark M Banaszak Holl

Ultrahigh vacuum scanning tunneling microscopy data investigating octylsilane (C8H17SiH3) monolayer pattern formation on Au(111) are presented. The irregular monolayer pattern exhibits a 60 A length scale. Formation of the octylsilane monolayer relaxes the Au(111) 23 x square root3 surface reconstruction and ejects surface Au atoms. Au adatom diffusion epitaxially extends the Au(111) crystal la...

2014
Zheng Liu Yung-Chang Lin Chun-Chieh Lu Chao-Hui Yeh Po-Wen Chiu Sumio Iijima Kazu Suenaga

It is extremely difficult to control the growth orientation of the graphene layer in comparison to Si or III-V semiconductors. Here we report a direct observation of graphene growth and domain boundary formation in a scanning transmission electron microscope, with residual hydrocarbon in the microscope chamber being used as the carbon source for in-plane graphene growth at the step-edge of bila...

Journal: :Journal of electron microscopy 2001
U Kaiser A Chuvilin K Saitoh W Richter

Si nanocrystals grown on cubic SiC have been characterized using high-resolution transmission electron microscopy. At lower temperatures nanocrystals grow in two different orientations, whereas at higher temperatures they grow in a single preferred orientation. The nanocrystals are shown to be unstrained; in some cases possibly due to the presence of a thin amorphous wetting layer.

2016
Jinbo Wu Zhengwang Zhu Hongwei Zhang Huameng Fu Hong Li Aimin Wang Haifeng Zhang

A novel Si/Sn composite anode material with unique ribbon structure was synthesized by Mechanical Milling (MM) and the structural transformation was studied in the present work. The microstructure characterization shows that Si/Sn composite with idealized entangled ribbon structured can be obtained by milling the mixture of the starting materials, Si and Sn for 20 h. According to the calculated...

2007
W. Gös T. Grasser

We conduct a thorough investigation of the tunneling dynamics of oxide traps in a-SiO2, in particular of the E′ δ center, the E ′ γ center, their hydrogenated counterparts, and the H atom. Based on these findings their behavior in the context of tunneling can be deduced. It is found that an Eγ center can exchange electrons with the Si bulk. The E ′ δ center shows two distinct behaviors induced ...

2001
D. Fischer

Recent progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (PCSi:H), as well as on combined a-Si:H/pc-Si:H stacked “micromorph” solar cells is reported. kc-Si:H p-i-n cells with a thickness of 3.6 pm, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mAlcm2, and a stable efficiency of 7.7%. a-Si:H/pc-Si:H tandem ce...

2003
J. C. Damasceno S. S. Camargo M. Cremona

In this work, a-C:H:Si (DLC-Si) films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH 4 + SiH 4 and C 2 H 2 + SiH 4 . The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were...

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