نتایج جستجو برای: silv
تعداد نتایج: 891 فیلتر نتایج به سال:
We report the lattice site and symmetry of optically active Dy3+ and Tm3+ implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that ...
To investigate the greater fixation of C3 to the erythrocytes of patients with paroxysmal nocturnal hemoglobinuria (PNH) upon activation of complement, we have examined the formation and the reaction of the C3 nephritic factor-stabilized alternative pathway convertase made with purified components on normal and PNH erythrocytes. Each convertase complex converts four to five times more fluid-pha...
Hollow-structured Si/SiC@C nanospheres were prepared through a magnesiothermic reduction of resin-coated SiO2 spheres. These nanostructured materials with high surface area not only show high adsorption capacities of industrial dyes from wastewater, but also exhibit excellent catalytic activities for chemical fixation of CO2 under mild, solvent-free conditions.
Ultrahigh vacuum scanning tunneling microscopy data investigating octylsilane (C8H17SiH3) monolayer pattern formation on Au(111) are presented. The irregular monolayer pattern exhibits a 60 A length scale. Formation of the octylsilane monolayer relaxes the Au(111) 23 x square root3 surface reconstruction and ejects surface Au atoms. Au adatom diffusion epitaxially extends the Au(111) crystal la...
It is extremely difficult to control the growth orientation of the graphene layer in comparison to Si or III-V semiconductors. Here we report a direct observation of graphene growth and domain boundary formation in a scanning transmission electron microscope, with residual hydrocarbon in the microscope chamber being used as the carbon source for in-plane graphene growth at the step-edge of bila...
Si nanocrystals grown on cubic SiC have been characterized using high-resolution transmission electron microscopy. At lower temperatures nanocrystals grow in two different orientations, whereas at higher temperatures they grow in a single preferred orientation. The nanocrystals are shown to be unstrained; in some cases possibly due to the presence of a thin amorphous wetting layer.
A novel Si/Sn composite anode material with unique ribbon structure was synthesized by Mechanical Milling (MM) and the structural transformation was studied in the present work. The microstructure characterization shows that Si/Sn composite with idealized entangled ribbon structured can be obtained by milling the mixture of the starting materials, Si and Sn for 20 h. According to the calculated...
We conduct a thorough investigation of the tunneling dynamics of oxide traps in a-SiO2, in particular of the E′ δ center, the E ′ γ center, their hydrogenated counterparts, and the H atom. Based on these findings their behavior in the context of tunneling can be deduced. It is found that an Eγ center can exchange electrons with the Si bulk. The E ′ δ center shows two distinct behaviors induced ...
Recent progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (PCSi:H), as well as on combined a-Si:H/pc-Si:H stacked “micromorph” solar cells is reported. kc-Si:H p-i-n cells with a thickness of 3.6 pm, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mAlcm2, and a stable efficiency of 7.7%. a-Si:H/pc-Si:H tandem ce...
In this work, a-C:H:Si (DLC-Si) films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH 4 + SiH 4 and C 2 H 2 + SiH 4 . The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were...
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