The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nan...

Silicon photonic modulators rely on the plasma dispersion effect by free-carrier injection or depletion, which can only induce moderate refractive index perturbation. Therefore, the size and energy efficiency of silicon photonic modulators are ultimately limited as they are also subject to the diffraction limit. Here we report an ultracompact electro-optic modulator with total device footprint ...

Modification of primary silicon was studied in Al-Si hypereutectic alloys with 17 Wt % silicon content. The alloys modified through non-conventional method using oxide addition. The effect of oxide on the morphology and size of Si phases in the hypereutectic Al-Si alloys investigated. The results show that the addition of MnO2 to the hypereutectic Al-Si alloys can modify the primary Si phases. ...

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in...

In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings, and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during t...

Smart power ICs, which monolithically integrate low-loss power devices and control circuitry, have attracted much attention in a wide variety of applications [1], [2]. Commonly used smart power devices are the LDMOS and LIGBT implemented in bulk silicon or SOI (Silicon on Insulator). One of the key issues in the realization of such ‘smart power’ technology is the isolation of power devices and ...

This paper describes a method for removing oxide film from the surface of silicon wafers using an inert gas fusion impulse furnace and precise determination of bulk oxygen within the wafer. A silicon wafer was cut to about 0.35 g (6 x 13 x 2 mm) and dropped into a graphite crucible. The sample was then heated for 40 s at 1300 degrees C. The wafer's oxide film was reduced by carbon and removed a...

X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) are used to determine chemical bonding and composition of ultra-thin films of mixed yttrium, silicon, and oxygen, formed by oxidation of metal on clean and pre-treated silicon. XPS and MEIS analyses indicate that oxidation of yttrium on bare silicon results in a fully oxidized film with a significant fraction of Y-O-...

one of the most important ingredients responsible for the success of integrated silicon technology is the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), and a major reason for its success is the MOSFET's scalability. Although the industry uses silicon and silicon dioxide in the electronic devices, it can be used for opto-electronic devices as well due to formation of fractal oxide ...