We propose a compact polarization beam splitter (PBS) based on a silicon nitride enhanced silicon-on-insulator platform using an augmented low-index guiding (ALIG) waveguide structure. In the ALIG structure, the TM mode is mostly confined in the low-index silicon nitride, while the TE mode is confined in the high-index silicon. Since the two modes are confined in two separate layers, their prop...

As a novel class of inorganic phosphors, oxynitride and nitride luminescent materials have received considerable attention because of their potential applications in solid-state lightings and displays. In this review we focus on recent developments in the preparation, crystal structure, luminescence and applications of silicon-based oxynitride and nitride phosphors for white light-emitting diod...

New silicon nitride coated optical gratings were tested by means of Optical Waveguide Lightmode Spectroscopy (OWLS). A thin layer of 10 nm of transparent silicon nitride was deposited on commercial optical gratings by means of sputtering. The quality of the layer was tested by x-ray photoelectron spectroscopy and atomic force microscopy. As a proof of concept, the sensors were successfully test...

This article refers to the paper "A novel method for isolation and recovery of ceramic nanoparticles and metal wear debris from serum lubricants at ultra-low wear rates" (Lal et al., 2016) [1] and describes the concentration and size distribution data of silicon nitride nanoparticles measured using nanoparticle tracking analysis (NTA). A NanoSight LM10 instrument was used to capture the video d...

Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high s...

We design and demonstrate a compact, narrow-linewidth integrated laser based on low-loss silicon nitride waveguides coupled to a III-V gain chip. By using a highly confined optical mode, we simultaneously achieve compact bends and ultra-low loss. We leverage the narrowband backreflection of a high-Q microring resonator to act as a cavity output mirror, a single-mode filter, and a propagation de...

The 1.54 m photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to excess Si in the films. The temperature dependence and the dynamics of the energy coupling between amorphous...

The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...

Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high s...

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into RGB parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This ...