Abstract—This paper presents a model to predict the depth of penetration in polycrystalline ceramic material cut by abrasive waterjet. The proposed model considered the interaction of cylindrical jet with target material in upper region and neglected the role of threshold velocity in lower region. The results predicted with the proposed model are validated with the experimental results obtained...

In this paper, for the first time, the square-shaped extended source tunneling field-effect transistor (SES TFET) by means of the silicon carbide polytype (3C-SiC) and dopant pocket layer has been presented. By inserting the silicon carbide polytype as substrate and n-type pocket in the channel at the source edge, on-current is increased by about 10 times compared with the conventional SES TFET...

Sales of electric vehicles are rising steadily. However, a major shortcoming is currently still the range in purely operation. To minimize losses transmission electrical energy and thus increase vehicles, United Silicon Carbide has developed silicon carbide semiconductors that can be used to realize more efficient drivetrains power components.

Valery I. Levitas,1,* Yanzhang Ma,2 Emre Selvi,2 Jianzhe Wu,2 and John A. Patten3 1Departments of Aerospace Engineering, Mechanical Engineering, and Material Science and Engineering, Iowa State University, Ames, Iowa 50011, USA 2Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas 79409, USA 3Department of Manufacturing Engineering, Western Michigan University, Kalamazoo,...

The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane...

We report on the polarization selection rules of inter-Landau-level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm(-1) on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and antisymmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau-level transitions, respectively. Fr...

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensit...

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization, the observed temperature-dependent parabolic magnetoresistivity is a manifestation of the electron-electron interaction. We can consistently describe the data with a model for diffusive (magneto)transport t...