In this paper we describe solutions to address critical challenges in direct fabrication of amorphous silicon thin film transistor (TFTs) arrays for high information content active matrix flexible displays for Army applications. For all flexible substrates a manufacturable handling protocol in automated display-scale equipment is required. For metal foil substrates the principal challenges are ...

A pixel design for active matrix organic light emitting diode (AM-OLED) displays employing hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is proposed. The proposed pixel circuit, which composed of five TFTs and one capacitor, could compensate the shift of threshold voltage of OLED as well as the threshold voltage of a-Si:H. We fabricated the pixel circuits on the glass sub...

We compare the efficiency of thin film photonic crystal solar cells consisting of conical pores and nanowires. Solving both Maxwell's equations and the semiconductor drift-diffusion in each geometry, we identify optimal junction and contact positions and study the influence of bulk and surface recombination losses on solar cell efficiency. We find that using only 1 lm of silicon, sculpted in th...

This article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300 degrees C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold film and (100) silicon. The TEM analysis...

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We measure charge transport in a hydrogenated amorphous silicon (a-Si:H) thin film using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances even in the presence of blocking contacts. At high temperatures, where the resistance of the a-Si:H is not too large, the charge detection measurement agrees wit...

We investigated the formation of large-grain polycrystalline silicon films on glass substrates for application in low-cost thin film crystalline silicon solar cells. Since the use of glass substrates constrains process temperatures, our chosen approach to form large-grain polycrystalline silicon templates is selective nucleation and solid phase epitaxy (SNSPE). In this process, selective crysta...

We have measured the fracture energy of lithiated silicon thin-film electrodes as a function of lithium concentration using a bending test. First, silicon thin-films on copper substrates were lithiated to various states of charge. Then, bending tests were performed by deforming the substrate to a pre-defined shape, producing a variation of the curvature along the length of the electrode. The be...

We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...