The IR and Raman spectra of the compounds (CH,),Sb-Sb(CH,), (I), [(CH,),Si],SbSb[Si(CH,),], (II), [(CH,),Si],As-As[Si(CH,),], (III) and (C,H,),Sb--Sb(C,H,), (IV) have been studied in the liauid and solid states. Given assianments for I to III are based on normal coordinate analyses, and force constants are reported. The solid state Raman spectra of I and II exhibit strong lines near 50 cm-‘, wh...

LHC Project Report 1135 CERN, CH-1211 Geneva 23 Switzerland 1) LAL, Univ. Paris-Sud, CNRS/IN2P3, Orsay, France. CERN, Geneva, Switzerland Presented at EPAC'08, 11th European Particle Accelerator Conference, Genoa, Italy June 23-27, 2008 in 2p 300 39 26 83 , v er si on 1 9 Ju n 20 09 Author manuscript, published in "11th European Particle Accelerator Conference (EPAC08), Genoa : Italie (2008)"

Local environments and lithium ion dynamics in the binary lithium silicide Li(12)Si(7), and the analogous germanium compound have been characterized by detailed (6)Li, (7)Li, and (29)Si variable temperature static and magic-angle spinning (MAS) NMR experiments. In the MAS-NMR spectra, individual lithium sites are generally well-resolved at temperatures below 200K, whereas at higher temperatures...

The populations of the lowest excited helium states 2s 3S1, 2s 1S, 2p 3P0 J, and 2p 1P0 created in an atmospheric helium capillary dielectric barrier discharge were determined by means of optical emission spectroscopy. The emitted intensities of 388, 501, 587, and 667 nm lines were measured side-on and end-on with respect to the discharge axis. The comparison of optically thin side-on spectra w...

Negative static charge and induced internal electric field have often been observed in the interfaces between silicon high-κ dielectrics, for example Al2O3 HfO2. The provides either beneficial (e.g., field-effect passivation) or harmful voltage instability) effect depending on application. Different intrinsic extrinsic defects dielectric film interface suggested to cause but this issue is still...

In a recent letter, Bokarev et al. [1] create a general relationship between state-dependent fluorescence yield and electron delocalization in L-edge x-ray absorption spectra based on 2p core-electron excitations into eg and t2g orbitals for three aqueous ionic species. In this Comment, we show that Bokarev et al. do not account for previous findings and that their claims are unsubstantiated. T...

This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2 /sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during dep...

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin fi...

Vibrational spectra of Xe-tagged cationic silicon oxide clusters Si(n)O(m)(+) with n = 3-5 and m = n, n ± 1 in the gas phase are obtained by resonant infrared multiple photon dissociation (IRMPD) spectroscopy and density functional theory calculations. The Si(n)O(m)(+) clusters are produced in a laser vaporization ion source and Xe complexes are formed after thermalization to 100 K. The cluster...

In the original article, XPS results shown in Figure 4 contain some errors resulting from an issue with instrument used to record data. The data were remeasured and corrected are replacement presented below. Several affected sentences (page 440, left column, second paragraph) reporting require correction have been reproduced below text indicated bold. … As 4a, spectrum of In2S3/TiO2 3d region s...