نتایج جستجو برای: semiconductor switch
تعداد نتایج: 119851 فیلتر نتایج به سال:
In the present paper, the inference of Cross-Phase Modulation and Cross Gain experiments on InGaAsP-based semiconductor optical amplifiers and Mach-Zehnder Interferometer (MZI) switches along with a novel characterization method for semiconductor optical amplifiers MZI switches which combines a pump-probe measurement with an interferometer bias scan are shown. For the 150-fs input pulses, a str...
In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.06...
-A non-revivable Privacy Protection Circuit is proposed and designed in a low frequency passive Radio Frequency Identification (RFID) transponder. The main component of the non-revivable Privacy Protection Circuit is a poly fuse. The fuse acts as a switch and will be burn out when the function of transponder must be disabled. The broken fuse can not be repaired and prohibit the power required f...
All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a...
We report on an electro-optically Q-switched Tb:LiYF 4 green laser pumped by a frequency-doubled optically semiconductor blue laser. The characteristics were studied under wide range of repetition rates from 200 Hz to 50 kHz using KD 2 PO Q-switch. Up 198 µJ pulse energy was obtained with width 248 ns at rate Hz, corresponding peak power 797 W 544 nm.
Photochromism is a phenomenon describing the irradiation-induced reversible transformation of chemical compound's colour between two states (dubbed as switch). This review makes an up-to-date account inorganic photochromic compounds. In first part, we summarise mechanisms involving transition metal oxides, with emphasis on canonical WO3 large-bandgap semiconductor. second discuss potential cont...
In the May 2002 Issue of this Magazine, Late Lester F. Eastman and Umesh K. Mishra made case for what was then a long-shot technology in world power semiconductors: gallium nitride (GaN). They presented an optimistic outlook powerful, rugged radio-frequency amplifiers then-nascent broadband wireless networks radar, as well power-switching applications electric grid. called GaN devices “the toug...
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