We study the dynamical behavior of disordered quantum well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time inc...

Various nanoscale semiconducting superlattices have been generated by direct templating in a lyotropic organic liquid crystal. These include superlattices of CdS, CdSe, and ZnS, templated in a liquid crystal formed by oligoethylene oxide oleyl ether amphiphiles and water. The semiconductor growth process copied the symmetry and characteristic dimensions of the original mesophase by avoiding gro...

In a semiconductor superlattice (SL), phonon-assisted electron transitions can occur under a quasi-population inversion, brought about by electrical biasing. This paper demonstrates the amplification of an optically excited quasi-monochromatic phonon beam by stimulated emission of phonons. Coherent phonons are generated by ultrafast optical excitation of a generator SL and passed once through a...

In this study, we examine processes limiting the performance of 4 micron superlattice pin photodiodes for different temperature and mesa size regimes. We show that the performance of large mesa photodiodes at low temperature is most severely limited by a trap-assisted tunneling leakage current (x300), while small mesa sizes are additionally limited by perimeter leakage (x20). At room temperatur...

In the presence of a lateral periodic potential modulation, two-dimensional electrons may exhibit interesting phenomena, such as a graphene-like energy-momentum dispersion, Bloch oscillations, or the Hofstadter butterfly band structure. To create a sufficiently strong potential modulation using conventional semiconductor heterostructures, aggressive device processing is often required, unfortun...

Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergen...