A device-level simulation is presented for studying wave propagation along metal–insulator–semiconductor interconnects. A set of nonlinear equations is first formulated by combining the motion equations of charged carriers and Maxwell’s equations. The set of nonlinear equations is then transformed into the frequency domain, which leads to sets of nonlinear equations for the fundamental mode and...

We propose an on-demand single-photon source for quantum cryptography using a metal–insulator–semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped quantum well, and the cylindrical gate under consideration is only nanometres in diameter. As in conventional metal–insulator–semiconductor capacitors, our system can also be biased into the inversion re...

Articles you may be interested in Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Appl. Lifetime-limited current in Cu-gate metal-oxide-semiconductor capacitors subjected to bias thermal stress M...

Semiconductor nanowires (NWs) have been researched as the building blocks for various nanosensors and devices, such as strain sensors, [ 1,2 ] photodetectors, [ 3 ] biosensors, [ 4 ] and gas sensors. [ 5 ] In recent years, wurtzite semiconductor NWs, such as ZnO, have been extensively investigated due to their piezoelectric properties. [ 6 ] With metal-semiconductor Schottky junctions, the elec...

Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not compatible with standard CMOS (complementary metal oxide semiconductor) fabrication processes. Nanowire synthesis with those metals that are CMOS compatible,...

We investigated spin-dependent transport properties from a viewpoint of spin detection and injection using a ferromagnetic metal / insulator (Al2O3)/ semiconductor tunnel junction with homogeneous and flat interfaces. For spin detection from the semiconductor, spin-polarized electrons were excited in the GaAs layer by circularly polarized light and injected into the permalloy layer. The energy ...

Nitride-based metal/semiconductor superlattices are promising candidates for high-temperature thermoelectric applications. Motivated by recent experimental studies, we perform first-principles density functional theory based analysis of electronic structure, vibrational spectra and transport properties of HfN/ScN metal/semiconductor superlattices for their potential applications in thermoelectr...

The current mirror is one of the necessary parts in CMOS (Complementary Metal Oxide Semiconductor) analog circuit design. The current mirror can be used as an active element and as a biasing circuit. The circuit structures are supposed to be compatible with low-voltage operating environments to avoid the decrement in system performance caused by the low-voltage low-power designs including reduc...

There has been significant interest in the development of multicomponent nanocrystals formed by the assembly of two or more different materials with control over size, shape, composition, and spatial orientation. In particular, the selective growth of metals on the tips of semiconductor nanorods and wires can act to couple the electrical and optical properties of semiconductors with the unique ...

Improving the performance of photoactive solid-state devices begins with systematic studies of the metal-semiconductor nanocomposites (NCs) upon which such devices are based. Here, we report the photo-dependent excitonic mechanism and the charge migration kinetics in a colloidal ZnO-Au NC system. By using a picosecond-resolved Förster resonance energy transfer (FRET) technique, we have demonstr...