We report phase-conjugate feedback into a fluorozirconate optical fiber amplifier at infrared wavelengths. By using a semiconductor laser diode at 807 nm, a grating is established in photorefractive BaTiO(3) that, in the ring configuration, provides feedback into the amplifier necessary for laser action. Once written, the grating is self-sustaining, and lasing is observed even after the laser d...

The nonlinear dynamics of an optically injected semiconductor laser are explored for radio-over-fiber uplink transmission. Under optical injection locking, the laser at the base station is operated in the period-one oscillation state, where its intensity oscillates at a tunable microwave frequency. When the oscillation is tuned to the subcarrier frequency, it is further locked by the uplink mic...

Multiwavelength semiconductor laser source for dense wavelength division multiplexing (DWDM) applications based on a novel dispersive cavity is described. Multiline lasing on the basis of a single-diode laser chip and multi-stripe diode laser is analyzed theoretically and demonstrated experimentally. Simultaneous lasing across 80% of the FWHM of the luminescence bandwidth of the AlGaAs active m...

The characteristics of a semiconductor laser operating in the threshold region are investigated systematically. In this transition region from below to above threshold, the linewidth versus injection current characteristic is found to be nonmonotonic: a local minimum of linewidth just below threshold and a local maximum just above threshold are confirmed experimentally. If a semiconductor laser...

In this paper we have numerically analyzed terahertzrange wavelength conversion using nondegenerate four wave mixing (NDFWM) in a SOA integrated DFB laser (experiments reported both in MIT electronics and Fujitsu research laboratories). For analyzing semiconductor optical amplifier (SOA), we use finitedifference beam propagation method (FDBPM) based on modified nonlinear SchrÖdinger equation an...

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabri...

We report on high-power operation of an optically pumped external-cavity semiconductor disk laser. 13.2W optical output power at 970 nm has been achieved in a double-pass pump configuration. The laser Bragg mirror was designed to provide not only high reflectivity for the laser wavelenth but also for the pumping beam. A proper layer structure which supports standing-wave patterns with a node ne...

Semiconductor lasers are very different from other lasers because refraction variation can't be avoided when the gain is changed. Refraction variation can be introduced the theory of semiconductor laser by a dimensional parameter. This parameter is called linewidth enhancement factor (LEF). The value of LEF is very important for many aspects of laser behavior. The LEF characterizes the linewidt...

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micr...

We report a single layer InAs/InP (100) quantum dot (QD) laser operating in continuous wave mode at room temperature on the QD ground state transition grown by metal organic vapor phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). This QDs on QW laser exhibits a high slope efficiency and a lasing wavelength of 1.74 μm. An extremely long...