نتایج جستجو برای: semiconductor junction

تعداد نتایج: 110404  

Journal: :Nano Research 2022

Abstract Graphene nanoribbons (GNRs) have attracted great research interest because of their widely tunable and unique electronic properties. The required atomic precision GNRs can be realized via on-surface synthesis method. In this work, through a surface assisted reaction we longitudinally fused the pyrene-based graphene (pGNR) different lengths by pentagon ring junction, built molecular jun...

2017
Xiwei Zhang Di Wu Huijuan Geng

Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-...

Journal: :Physical chemistry chemical physics : PCCP 2016
Zeyang Xu Xiaosong Chen Suna Zhang Kunjie Wu Hongwei Li Yancheng Meng Liqiang Li

Electrode materials and geometry play a crucial role in the charge injection efficiency in organic transistors. Reduced graphene oxide (RGO) electrodes show good compatibility with an organic semiconductor from the standpoint of energy levels and ordered growth of the organic semiconductor, both of which are favourable for charge injection. However, the wide electrode edge (>10 nm) in commonly-...

2003
Kapil Dev M. Y. L. Jung R. Gunawan R. D. Braatz E. G. Seebauer

A mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of Si(100)-SiO2 interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profi...

Journal: :IEEE Trans. Computers 1971
Howard L. Parks

A batch-fabricated three-dimensional coaxial microelectronic interconnection and peckaging technique has been developed that is particularly suited to semiconductor chips of all complexities, ranging from single-junction devices to large-scale integrated circuit devices. The interconnections are coaxial in three dimensions, are formed by electrochemically sculpturing copper planes, and are asse...

Journal: :ACS applied energy materials 2021

Introducing triple-charge (H+/O2–/e–) conducting materials is a promising alternative to modify cathode as an electrolyte in advanced ceramic fuel cells (CFC). Herein, we designed novel perovskite-structured semiconductor Co0.2/Fe0.2-codoped La0.5Ba0.5Zr0.3Y0.3O3?? (CF-LBZY) and used electrode. CF-LBZY perovskite exhibited high ionic (O2–/H+) conductivity of 0.23 S/cm achieved remarkable power ...

2014
Raj K. Vinnakota Dentcho A. Genov

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonst...

2005
D. M. Schaadt E. T. Yu

Surface plasmon resonances in metallic nanoparticles are of interest for a variety of applications due to the large electromagnetic field enhancement that occurs in the vicinity of the metal surface, and the dependence of the resonance wavelength on the nanoparticle’s size, shape, and local dielectric environment. Here we report an engineered enhancement of optical absorption and photocurrent i...

Journal: :Science 2021

A Majorana look-alike Most experimental claims of bound states, unusual quasiparticles that may become the cornerstone topological quantum computing, rest on observation a persistent zero bias peak (ZBP) in tunneling spectra. In semiconductor–superconductor heterostructures, this feature also be caused by topologically trivial Andreev states. Valentini et al. provide comprehensive evidence ZBPs...

Journal: :Microelectronics Reliability 2011
V. V. N. Obreja C. Codreanu D. Poenar Octavian Buiu

Typical blocking I–V characteristics are shown and analyzed for PN junctions exhibiting a breakdown region above 1000 V from commercial diodes and power MOSFETs. The leakage reverse current of PN junctions from commercial silicon devices available at this time has a flowing component at the semiconductor–passivant material interface around the junction edge. Part of the plotted experimental cur...

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