Recently, sputtered metal-oxide-based field effect transistors (FETs) have been demonstrated with higher charge carrier mobilities, higher current densities, and faster response performance than amorphous silicon FETs, which are the dominant technology used in display backplanes [1-2]. Furthermore, the optically transparent semiconducting oxide films can be deposited in a near-room-temperature ...

In recent years perovskite based solar cells have become a promising photovoltaic technology, most notable for their high power conversion efficiencies and potential for cheap solution-processable module production. This report identifies the ongoing research and development into the behaviour of the perovskite material as a semiconducting active area and the ever improving fabrication of perov...

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-vo...

A tubular furnace specifically designed for growing nanostructured materials is presented in this work. The configuration allows an accurate control of evaporation temperature, substrate temperature, total pressure, oxygen partial pressure, volumetric flow and source-substrate distance, with the possibility of performing both downstream and upstream depositions. In order to illustrate the versa...

In this paper a short overview is given of the several FET-based sensor devices and the operational principle of the ISFET is summarized. Some of the shortcomings of the FET sensors were circumvented by an alternative operational mode, resulting in a device capable of acid/base concentration determination by coulometric titrant generation as well as in an original pH-static enzyme sensor. A mor...

The Co0.7-xNixMn0.3Fe2O4 (CNMFO) ferrites with x = 0.00, 0.05, 0.10 and 0.15, PbZr0.52Ti0.48O3 (PZT) ferroelectric 30% CNMFO – 70% PZT magnetoelectric (ME) composites were synthesized by double sintering ceramic method. XRD confirmed the pure phase formation of all compositions ferrite, ME composites. All ferrites, show negative temperature coefficient resistance (NTCR) confirming semiconductin...

Owing to its remarkable electronic and transport properties, graphene has great potential of replacing silicon for next-generation electronics and optoelectronics; but its zero bandgap associated with Dirac fermions prevents such applications. Among numerous attempts to create semiconducting graphene, periodic patterning using defects, passivation, doping, nanoscale perforation, etc., is partic...

Exceptional electronic and mechanical properties together with nanoscale diameter make carbon nanotubes (CNTs) promising candidates for nanoscale transistors. Semiconducting CNTs can be used as a channel for field-effect transistors (FETs), and metallic CNTs can serve as interconnect wires. In short devices carrier transport through the device is nearly ballistic [1]. The non-equilibrium Green’...

We numerically study the possibility of using atomically thin transition metal dichalcogenides (TMDs) for applications requiring broadband absorption in the visible range of the electromagnetic spectrum. We demonstrate that when monolayer TMDs are positioned into a finite-period of multilayer Bragg stack geometry, they make broadband, wide-angle, almost polarization-independent absorbers. In ou...

Graphene exhibits unusual electronic properties, caused by a linear band structure near the Dirac point. This band structure is determined by the stacking sequence in graphene multilayers. Here we present a novel method of microscopically controlling the band structure. This is achieved by epitaxy of graphene on 3C-SiC(111) and 3C-SiC(100) thin films grown on a 3D microfabricated Si(100) substr...