نتایج جستجو برای: schottky diode

تعداد نتایج: 24139  

2012
Xiaohua Yi Chunhee Cho Yang Wang James Cooper Rushi Vyas Manos M. Tentzeris

This paper presents the design, simulation, and preliminary measurement of a passive (battery-free) frequency doubling antenna sensor for strain sensing. Illuminated by a wireless reader, the sensor consists of three components, i.e. a receiving antenna with resonance frequency f0, a transmitting antenna with resonance frequency 2f0, and a matching network between the receiving and transmitting...

2009
L. Magafas

The aim of the present work is to study the optimization of the electrical and optical properties of a-SiC:H Schottky diodes using thermal annealing process to a-SiC:H thin films in the range from 300C up to 675C. The films were deposited onto c-Si(n) using the rf sputtered method at three different hydrogen flow rates, 9sccm, 14sccm, and 20sccm. Subsequently, Al dots evaporated onto a-SiC:H in...

2005
Woochul Jeon Victor L. Granatstein

Title of Dissertation: DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS Woochul Jeon, Doctor of Philosophy, 2005 Directed By: Professor John Melngailis Department of Electrical and Computer Engineering On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector ...

2012
Fazal Wahab

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhi...

2012
Fazal Wahab

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhi...

2012
Antwi Nimo Dario Grgic Leonhard M. Reindl

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical mo...

2016
K. K. Sharma

2014 A Schottky diode exhibits a barrier height which increases when the semiconductor doping is superficially inversed. This effect is modellized, so as to show the influence of the main parameters : doping and thickness of the inversion layer, interface state configuration, metal work function. The analysis of a few available experimental results is consistent with the assumption that the int...

2004
Behnam Jamali Peter Cole Damith Ranasinghe Zheng Zhu

In this paper, we present and analyze the most fundamental constraint of RFID systems, power rectification. This issue plays an important role in development of long-range RFID systems. Rectifiers are the key components in power rectifications and efficiency of an RFID system. Therefore this paper is concentrated in investigating this major issue. To tackle this problem a novel Schottky Barrier...

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