We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemp...

Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Us...

Three types of two-terminal CdS nanowire devices with distinct current versus voltage characteristics were fabricated by forming Schottky and/or Ohmic contacts in a controlled manner. Argon ion bombardment of CdS nanowires increased the carrier concentration allowing the formation of Ohmic Ti–CdS contacts. Scanning photocurrent microscopy SPCM was used to explore the influence of the contacts o...

1. ABSTRACT. * A technique incorporating a p+ doping spike at the silicide/Si interface to reduce the effective Schottky barrier of the silicide infrared detectors and thus extend the cutoff wavelength has been developed. In contrast to previous approaches which relied on the tunneling effect, this approach utilizes a thinner doping spike (< 2 nm) to take advantages of the strong Schottky image...

In this study, the effect of molybdate on the electrochemical behavior and semi-conductive properties of duplex stainless steel 2205 passive film at NaCl solutions was investigated. Cyclic potentiodynamic polarization, impedance spectroscopy, mott-schottky plots and scanning electron microscopy (SEM) were used to study the passive behavior. Polarization curves showed that the corrosion current ...

This paper describes 420GHz subharmonic mixer based on heterogeneous integrated schottky diode designed by University of Electronic Science and Technology of China (UESTC) and fabricated by China Electronics Technology Group Corporation-13 (CETC-13). The whole circuit including schottky diodes is integrated directly on the 50 μm quartz instead of the traditional 12 um GaAs substrate thus the ci...

The metal-insulator-semiconductor (MIS) diode is the most useful device in the study of semiconductor surfaces. The current-voltage data of the metal-insulatorsemiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer parameters. The calculated current–voltage data are fitted into ideal thermionic emission diffusion equation...

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer leng...

We fabricated high standoff voltage ~450 V! Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a curr...

Whisker contacted GaAs Schottky barrier diodes are the standard devices for mixing and multiplier applications in the THz frequency range. With the decreasing size of Schottky diodes for operation at higher frequencies, the reliability and the physical understanding of the Schottky barrier becomes increasingly important. In this contribution, we present new results concerning the reliability of...