We propose a solution to the hyperelliptic Schottky problem, based on the use of Jacobian Nullwerte and symmetric models for hyperelliptic curves. Both ingredients are interesting on its own, since the first provide period matrices which can be geometrically described, and the second have remarkable arithmetic properties.

The goal of this paper is to describe a theoretical construction of an infinite collection of non-classical Schottky groups. We first show that there are infinitely many non-classical noded Schottky groups on the boundary of Schottky space, and we show that infinitely many of these are “sufficiently complicated”. We then show that every Schottky group in an appropriately defined relative conica...

Let Σg,r be a compact oriented surface of genus g with r boundary components. We determine the abelianization of the symmetric mapping class group M̂(g,r)(p2) of a double unbranched cover p2 : Σ2g−1,2r → Σg,r using the Riemann constant, Schottky theta constant, and the theta multiplier. We also give lower bounds of the abelianizations of some finite index subgroups of the mapping class group.

We calculate the minimal energy path over the sphaleron barrier in the presence of fermions, assuming that the fermions of a doublet are degenerate in mass. This allows for spherically symmetric ansätze for the fields, when the mixing angle dependence is neglected. While light fermions have little influence on the barrier, the presence of heavy fermions (MF ∼ TeV) strongly deforms the barrier, ...

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current-voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to ...

Let Γ0 ⊂ O(2, 1) be a Schottky group, and let Σ = H2/Γ0 be the corresponding hyperbolic surface. Let C(Σ) denote the space of geodesic currents on Σ. The cohomology group H1(Γ0, V) parametrizes equivalence classes of affine deformations Γu of Γ0 acting on an irreducible representation V of O(2, 1). We define a continuous biaffine map C(Σ)×H1(Γ0, V) Ψ −→ R which is linear on the vector space H1(...

This numerical study examines the importance of self-consistently accounting for transport and electrostatics in the calculaiton of semiconductor/metal Schottky contact resistivity. It is shown that ignoring such self-consistency results in significant under-estimation of the contact resistivity. An explicit numerical method has also been proposed to efficiently improve contact resistivity calc...

Nanotransistors typically operate in far-fromequilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs)...