We report the first high-precision interferometer using large sapphire mirrors, and we present the first direct, broadband measurements of the fundamental thermal noise in these mirrors. Our results agree well with the thermoelastic-damping noise predictions of Braginsky, et al. and Cerdonio et al., which have been used to predict the astrophysical reach of advanced interferometric gravitationa...

We present a detailed study on the spatiotemporal density evolution of a plasma created by optical-field ionization of a high-pressure pulsed gas jet by a 10-TW, 60-fs Ti:sapphire laser. The plasma dynamics has been studied on a 17-ns time scale with a 60-fs time resolution and a 5-microm space resolution using a Mach-Zehnder interferometer. The density profile and the plasma radial expansion w...

This study reports on the use of a substrate-reclamation technology for a gallium nitride (GaN)-based lighting-emitting diode (LED) wafer. There are many ways to reclaim sapphire substrates of scrap LED wafers. Compared with a common substrate-reclamation method based on chemical mechanical polishing, this research technology exhibits simple process procedures, without impairing the surface mor...

page 62 Abstract: A fiber pullout test for examining controlled interfaces in fiber reinforced polymers has been designed and demonstrated. This test has been utilized in determining interfacial fracture toughness for sapphire/epoxy single fiber composite specimens. Some of these specimens incorporated a self-assembled monolayer at the sapphire/ epoxy interface as a means of adhesion control—th...

The development of long-term data storage technology is one of the urging problems of our time. This paper presents the results of implementation of technical solution for long-term data storage technology proposed a few years ago on the basis of single crystal sapphire. It is shown that the problem of reading data through a substrate of negative single crystal sapphire can be solved by using f...

Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is ...

We have measured the contact angle of the interface of phase-separated 3He-4He mixtures against a sapphire window. We have found that this angle is finite and does not tend to zero when the temperature approaches T(t), the temperature of the tricritical point. On the contrary, it increases with temperature. This behavior is a remarkable exception to what is generally observed near critical poin...

Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 8C) is demonstrated. Photoionisation spectroscopy reveals trap level of ...

A high pressure, high temperature sapphire cell has been designed to provide users at the Spallation Neutron Source with the ability to perform in-situ supercritical bulk water studies. The design criteria for the cell required the achievement of a maximum pressure of 150 MPa at the maximum temperature of 500 ̊C. Other conceptual constraints, such as a 360 ̊ viewing angle and top loading integrat...