نتایج جستجو برای: rmse034 mmday and mbe
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A successful implementation of the Model-Based Enterprise concept (MBE) requires maximizing the potential benefits of annotated 3D models. The foundations of the MBE model are established by digital product definition data practices, which are currently regulated by standards such as ASME Y14.41-2003 and ISO 16792:2006. At the center of the MBE concept is the notion of CAD model reusability, wh...
MBE growth on high symmetry surfaces depends to some extent on the shape of the terraces which form the embryos of each new atomic layer. The conditions for formation of compact or fractal terraces are discussed in two limits: large terraces, to which a continuous description applies, and small terraces, which require that the discrete nature of matter be taken into account. In both cases it is...
Starting this year, Molecular Biology and Evolution (MBE) will release a list of articles designated Citation Classics to celebrate and highlight the diversity and impact of MBE publications in molecular evolutionary research. Early (1983–2007) and Recent (2008–2012) Citation Classics were selected based on the highest number of citations per year in each period. For the Early category, life-ti...
Half-metallic Co 2 FeAl Heusler alloy thin films with various thickness were prepared by MBE method and its magnetic crystalline properties investigated. At the of 20 nm above, good high B2-order parameter was obtained. In addition, damping constant evaluated from peak-to-peak linewidth measured FMR ultra-low below 0.001 obtained at film 30 nm. These results are thanks to excellent half-metalli...
The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside bulk of material. surface states are spin polarized, protected time-inversion symmetry, and thus robust scattering nonmagnetic defects. A high-purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates...
Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPEand MBE-grown phot...
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