AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resis...

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We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...

Some FeNi-Ag granular films of composition Fe ld%.w‘h8z.2z (sample A) and Fe7.62Ni16.4Ag75.98 (B) were prepared by using rf magnetron sputtering, gnd once deposited were rapidly annealed at 600, 650, and 750 “C. All samples displayed giant magnetoresistance. The zero-field-cooled and field-cooled processes evidence the segregation of ferromagnetic particles with a broad size distribution. The t...

A highly sensitive and large working range giant magnetoimpedance (GMI) effect is found in the novel nanostructure: nanobrush. The nanostructure is composed of a soft magnetic nanofilm and a nanowire array, respectively fabricated by RF magnetron sputtering and electrochemical deposition. The optimal GMI ratio of nanobrush is promoted to more than 250%, higher than the pure FeNi film and some s...

Nanocrystalline zinc oxide (ZnO) thin films have been prepared on glass substrates at different temperatures through planar RF-magnetron sputtering. Structural properties with respect to substrate temperature have been studied with xray diffraction (XRD) patterns. The stoichiometry in the films is studied with X-ray photoemission spectroscopy (XPS). The shifts in the absorption edge of the film...

Hafnium oxide mixed tantalum oxide (HTO) and Zirconium oxide mixed tantalum oxide (ZTO) layers were deposited on chemically cleaned p-Si substrate using RF magnetron sputtering technique. The oxide/Si stacks were annealed in oxygen for 30 minutes at 400 °C as on initial investigation. Both composition and structural properties were absolutely interesting to move further for electrical measureme...

RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The electric conduction mechanism of the AZO and GZO films came mainly from the Al and Ga, the oxygen vacancies, Zn interstitial atoms, and Al and/or Ga interstitial atoms. AZO and GZO films achieved higher conduction than...