We have demonstrated a novel method of depositing ALD-Al 2 O xmlns:xlink="http://www.w3.org/1999/xlink">3 /PECVD-SiO bi-layer dielectric to passive the surface channels hydrogen-terminated diamond (H-diamond). After Al /SiO passivation, current increased with time and then tended be satura...

We describe the formation of highly uniform Quenched-carbon (Q-carbon) layers by plasma-enhanced chemical vapor deposition (PECVD) followed low-energy Ar+ ion bombardment to achieve wafer-scale integration Q-carbon films. After PECVD, 9 nm and 20 thick silicon-doped diamond-like carbon (Si-DLC) films showed complete conversion into using 250eV ions via negative biasing. However, this was only p...

This work aims to optimize Plasma-Enhanced Chemical Vapour Deposition (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) as a conformal passivation layer for invasive microelectrode array (MEA) neural interface applications. By carefully tuning the PECVD deposition parameters, composition, structure, electrical, and mechanical properties of films can be optimized high resistivity, low str...

A sensitive and selective field-effect transistor (FET) biosensor is demonstrated using vertically-oriented graphene (VG) sheets labeled with gold nanoparticle (NP)-antibody conjugates. VG sheets are directly grown on the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sensing channel. The protein detection is accomplished through measuring ...

The introduction of new in situ sensing creates the possibility of directly controlling critical process variables in plasma enhanced chemical vapor deposition systems (PECVD). The complexity of this process makes it necessary to develop empirical models of the system dynamics. This paper describes the experimental and numerical procedures for identifying both transfer function and recurrent ne...

The application of plasma-enhanced chemical vapour deposition (PECVD) in the production and modification of carbon nanotubes (CNTs) will be reviewed. The challenges of PECVD methods to grow CNTs include low temperature synthesis, ion bombardment effects and directional growth of CNT within the plasma sheath. New strategies have been developed for low temperature synthesis of single-walled CNTs ...

Thin polymer films were deposited on polished stainless-steel samples by PECVD from a cyclopropylamine precursor and characterized X-ray photoelectron spectroscopy, secondary-ion mass spectrometry glow-discharge optical emission spectroscopy (GDOES) depth profiling. These profiles exhibited reasonable agreement. The GDOES involved the erosion of in plasma sustained an asymmetric RF capacitively...

This paper reports on the final main results of the Flexcellence project. The project was running for 3 years and its goal was the development of equipments and processes for cost-effective roll-to-roll production of high-efficiency flexible thin-film silicon solar cells and modules. All aspects necessary for the successful implementation of the technology could be considered simultaneously and...

We have developed 0.1-μm gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeterwave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groove on electrical performance have been analyzed and compared. Competing passivation technologies, atomic layer deposition (ALD) aluminum oxide (Al2O3) and plasma-enh...