نتایج جستجو برای: resistive

تعداد نتایج: 9886  

2016
Karsten Fleck Camilla La Torre Nabeel Aslam Susanne Hoffmann-Eifert Ulrich Böttger Stephan Menzel

Karsten Fleck, Camilla La Torre, Nabeel Aslam, Susanne Hoffmann-Eifert, Ulrich Böttger, and Stephan Menzel Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, 52074 Aachen, Germany Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany (Received 27 July 2016; revised manuscript received 14 October 2016; published 27 D...

2013
Dong-Hyeok Lim Ga-Yeon Kim Jin-Ho Song Kwang-Sik Jeong Dong Chan Kim Seok-Woo Nam Mann-Ho Cho Tae-Geol Lee

Journal: :مجله اقتصادی- ماهنامه بررسی مسایل و سیاستهای اقتصادی 0
محسن ابراهیمی mohsen ebrahimi معصومه زیرک masoumeh zirak

0

2010
Jerome Carman Kelsey Collier Sean Crosby Vitaliy Fadeyev Bruce A. Schumm

The principle of resistive charge division for position measurement was laid out by Radeka in 1974 [1] but, to date, has not been explored for estimating the longitudinal coordinate for silicon microstrip detectors. To exploit resistive charge division, the impedance of the readout structure must be large relative to the dynamic impedance of the amplifier circuitry. Somewhat counter-intuitively...

2014
Michael Z. Q. Chen Kai Wang Guanrong Chen

A survey on the development of resistive network synthesis is presented. Tellegen’s result is first introduced, which shows that paramountcy is the necessary and sufficient condition for synthesis if n ≤ 3. Then, some more general cases are presented, including works by Cederbaum, Guillemin, Brown, Reed, Weinberg, and Boesch. These results range from necessary realizability conditions of genera...

Journal: :Microelectronics Journal 2005
Xiangning Luo Alexei O. Orlov Gregory L. Snider

The purpose of our work is to evaluate single-electron devices fabricated using resistive microstrips and to investigate its applicability for single-electron logic. In this article, we present our work on the fabrication and characterization of SETs with gold islands and CrOx resistive microstrips. The electron transport mechanism of CrOx resistors is also discussed and hypothesis of two types...

Journal: :Microelectronics Reliability 2014
Joel Molina Reyes Rene Valderrama Carlos Zuniga Pedro Rosales Wilfrido Calleja Arriaga Alfonso Torres-Jácome Javier DeLa Hidalga Edmundo A. Gutierrez-D

Resistive-switching devices based on Metal–Insulator–Metal (MIM) structures have shown promising memory performance characteristics while enabling higher density of integration. Usually, these MIM devices are fabricated using different processing conditions including high temperature thermal treatments that could lead to undesirable chemical reactions in the insulator material and at its interf...

Journal: :IEICE Transactions 2007
Akira Tsuchiya Masanori Hashimoto Hidetoshi Onodera

This paper discusses the resistive termination of on-chip high-performance interconnects. Resistive termination is effective to improve the bandwidth of on-chip interconnects, on the other hands, increases the power dissipation and the area. Therefore trade-off analysis about resistive termination is necessary. This paper proposes a method to determine the termination of on-chip interconnects. ...

2010
Hiroshi TAKAHASHI Yoshiaki TSUKAMOTO Eiji NAKANO

In order to automate the scooping task, it is desirable that the resistive force acting on the bucket be obtained before the scooping is performed. The objective of this study is to derive theoretically the resistive forces acting on the bucket during scooping of piled rock fragments. First, the changes in the shape of the rock pile due to the penetration of it by the bucket are modeled. Based ...

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