This paper proposes a 10b 120MS/s ADC with a supply-insensitive current reference based on six circuit elements. The simulated reference shows a mean supply rejection of 1.1%/V between 1.6V and 2.0V. The measured ADC demonstrates a differential non-linearity of 0.18LSB and a dynamic performance of 9 effective numbers of bits.

This paper presents a review of constraints, limitation factors and challenges to implement sub 1 V CMOS bandgap voltage reference (BVR) circuits in today’s and future submicron technology. Moreover, we provide insight analysis of BVR circuit architectures a designer can relay upon when building CMOS voltage reference.

With the dramatic increase in the number of transistors on a chip and the increasing needs for battery-powered applications, low-voltage circuit design techniques have been widely studied in recent year. However, these low supply voltage research efforts have been focused mainly on digital circuits, especially on high density memory circuits. Reported success in achieved high performance low vo...

A sub-1V bandgap voltage reference (BGVR) in 0.16μm CMOS is presented that circumvents the trade-off between area and power consumption in conventional sub-1V BGVR topologies. This circuit can be used in systems to generate reference voltages locally, eliminating the conventional relatively large BGVR and its global reference voltage distribution interconnect. The active area is 0.0025mm; at 29...

This paper presents a new framework for formal logic veri cation. What is depicted here is fundamentally di erent from previous approaches. In earlier appraoches, the circuit is either not changed during the veri cation process, as in OBDD or implicationbased methods, or the circuit is progressively reduced during veri cation. Whereas in our approach, we actually enlarge the circuits by adding ...

A new curvature-corrected bandgap reference is presented which is able to function at supply voltages as low as 1 V, at a supply current of only 100 PA. After trimming this bandgap reference has a temperature coefficient (TC) of +4 ppm/OC. The reference voltage is about 200 mV and it can simply be adjusted to higher reference voltages, The temperature range of this circuit is from O to 125” C. ...

This paper presents the printed thick film Ag|AgCl|KCl reference electrodes for electrochemical or biosensors application and their electrochemical and analytical performance. The reference electrode exhibits a stable potential against standard glass reference electrode with a potential difference of 5 mV in the deionized water. The anodic and cathodic peak current of the electrode increase wit...

A CMOS bandgap current reference circuit has been developed in a 0.13 um CMOS technology. The circuit exhibits low sensitivity to temperatureand power supply variations. The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable operation in harsh radiation environment possible. In the present design we utilize only MOS struc...