نتایج جستجو برای: random access time

تعداد نتایج: 2358137  

2002
Ralph Siebert

In this study we derive a stuctural econometric model of learning by doing with multiproduct competition from a dynamic oligopoly game. We show the importance to account for multiproduction effects through product differentiation when measuring learning by doing. Using quarterly firm-level data for the dynamic random access memory semiconductor industry, we provide evidence that accounting for ...

Journal: :IBM Journal of Research and Development 2006
Thomas M. Maffitt John K. DeBrosse J. A. Gabric Earl T. Gow Mark C. Lamorey John S. Parenteau Dennis R. Willmott Mark A. Wood William J. Gallagher

considerations for MRAM T. M. Maffitt J. K. DeBrosse J. A. Gabric E. T. Gow M. C. Lamorey J. S. Parenteau D. R. Willmott M. A. Wood W. J. Gallagher MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design co...

Journal: :SIAM J. Comput. 1998
Phillip B. Gibbons Yossi Matias Vijaya Ramachandran

This paper introduces the queue-read queue-write (qrqw) parallel random access machine (pram) model, which permits concurrent reading and writing to shared-memory locations, but at a cost proportional to the number of readers/writers to any one memory location in a given step. Prior to this work there were no formal complexity models that accounted for the contention to memory locations, despit...

2015

Ternary content addressable memories (TCAMs) perform high-speed lookup operation but when compared with static random access memories (SRAMs), TCAMs have certain limitations such as low storage density, relatively slow access time, low scalability, complex circuitry, and are very expensive. Thus, can we use the benefits of SRAM by configuring it (with additional logic) to enable it to behave li...

2002
Jae H. Pae Donald R. Lehmann

This research focuses on the diffusion patterns of the adjacent generations of technology and its relation to the time that elapses between them (intergeneration time). The authors analyze 45 new technologies in 15 industries and find that the adoption curves systematically vary across generations from 2 years for dynamic random-access memory (DRAM) chips to more than 30 years for steelmaking. ...

Journal: :IBM Journal of Research and Development 2006
William J. Gallagher Stuart S. P. Parkin

This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile random access memory. The initial focus is on the technological roots of the magnetic tunnel junction, and then on the recent progress made with engineered materials for this device. Following that, we...

Journal: :Inf. Process. Lett. 1994
Narsingh Deo Amit Jain Muralidhar Medidi

We consider the problem of merging two sorted arrays and on an exclusive read, exclusive write parallel random access machine (EREW PRAM, see [8] for a definition). Our approach consists of identifying elements in and which would have appropriate rank in the merged array. These elements partition the arrays and into equal-size subproblems which then can be assigned to each processor for sequent...

2015
Adnan Mehonic Mark Buckwell Luca Montesi Leon Garnett Stephen Hudziak Sarah Fearn Richard Chater David McPhail Anthony J. Kenyon

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید