نتایج جستجو برای: quantum pressure

تعداد نتایج: 698809  

B. Arzhang H. Seifoory M. Sahrai P. Navaeipour

The time evaluation of quantum entropy in a four-level double- type atomic system is theoretically investigated. Quantum entanglement of the atom and its spontaneous emission fields is then discussed via quantum entropy. It is found that the degree of entanglement can be increased by the quantum interference induced by spontaneous emission. The phase dependence of the atom-field entanglement is...

A. Bodaghi

The paper deal with non-commutative geometry. The notion of quantumspheres was introduced by podles. Here we define the quantum hermitianmetric on the quantum spaces and find it for the quantum spheres.

Journal: :Science 2004
S A Grigera P Gegenwart R A Borzi F Weickert A J Schofield R S Perry T Tayama T Sakakibara Y Maeno A G Green A P Mackenzie

Condensed systems of strongly interacting electrons are ideal for the study of quantum complexity. It has become possible to promote the formation of new quantum phases by explicitly tuning systems toward special low-temperature quantum critical points. So far, the clearest examples have been appearances of superconductivity near pressure-tuned antiferromagnetic quantum critical points. We pres...

Journal: :The journal of physical chemistry. B 2012
Adele D Laurent Vladimir A Mironov Prem P Chapagain Alexander V Nemukhin Anna I Krylov

Molecular dynamics calculations of pressure effects on mStrawberry and mCherry fluorescent proteins are reported. The simulations reveal that mStrawberry has much floppier structure at atmospheric pressure, as evidenced by larger backbone fluctuations and the coexistence of two conformers that differ by Ser146 orientation. Consequently, pressure increase has a larger effect on mStrawberry, maki...

2012
M. Baenninger M. König A. G. F. Garcia M. Mühlbauer C. Ames P. Leubner H. Buhmann L. W. Molenkamp D. Goldhaber-Gordon

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2015
Jianmin Tao Shi Liu Fan Zheng Andrew M. Rappe

Chemical bonding is the central concept of chemistry that has been used to explain the properties of molecules and solids as well as chemical processes. In recent years, considerable progress has been made toward a simple and yet fundamental understanding of this concept for isolated systems. Here we propose the quantum pressure to study electron localization in molecules and solids as well as ...

2007
C. A. Moscoso - Moreno R. Franco J. Silva - Valencia

We study the effects of hydrostatic pressure over the ground state binding energy of light hole excitons confined in GaAs − Ga1−xAlxAs spherical quantum dots. We applied the variational method using 1s-hydrogenic wavefunctions, in the framework of the effective mass approximation. We computed the exciton binding energy as a function of the dot radius, Al concentrations and pressures. Our result...

2017
Na Hyun Jo Udhara S. Kaluarachchi Yun Wu Daixiang Mou Lunan Huang Valentin Taufour Adam Kaminski Sergey L. Bud’ko Paul C. Canfield

Systematic measurements of temperature-dependent magnetization, resistivity, and angle-resolved photoemission spectroscopy (ARPES) at ambient pressure as well as resistivity under pressures up to 5.25 GPa were conducted on single crystals of CrAuTe4. Magnetization data suggest that magnetic moments are aligned antiferromagnetically along the crystallographic c axis below TN=255 K. ARPES measure...

A. Azari, K. Seyyedi.S S. Zabihi A.,

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

2014
Fan Ren Kar Wei Ng Kun Li Hao Sun Connie J. Chang-Hasnain

Articles you may be interested in High-quality 1.3 m-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Appl. High detectivit...

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