We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si w1 0 0x substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300-nm thick epitaxial layers at 300 8C on silicon w1 0 0x substrates using a high H :SiH ratio of 70:1. Transmission electron microscopy confirms that the 2 4 films are epitaxial...

We report an unexpected temperature dependence of the electron-spin-resonance linewidth DHPP for the silicon D-center resonance in polycrystalline silicon. Distinct temperature dependences were found in asprepared and hydrogen-passivated polycrystalline silicon. This observation invalidates the identification of this resonance with a static dangling bond, and changes the perspective on similar ...

Three different topics in phase-field modelling of solidification are discussed, with particular emphasis on the limitations of the currently available modelling approaches. First, thin-interface limits of two-sided phasefield models are examined, and it is shown that the antitrapping current is in general not sufficient to remove all thin-interface effects. Second, orientation-field models for...

The hallmark of materials science is the ability to tailor the structures of a given material to provide a desired response. In this work, the structures involving crystallinity and crystallographic orientation of Cu nanowires electrochemically fabricated in ion-track templates have been investigated as a function of fabrication condition. Both single crystalline and polycrystalline nanowires w...

In this study, we present a theoretical 3D study of a polycrystalline silicon solar cell in frequency modulation under polychromatic illumination and applied magnetic field. The influence of the applied magnetic field on the diode current density Jd, the both electric power-photovoltage and photocurrent-photovoltage characteristics are discussed. Nyquist diagram permitted to determine the elect...

In this Article, the Figure labels were omitted from Figures 1-3. The correct Figures 1-3 appear below as Figure 1, Figure 2 and Figure 3 respectively. There is also a typographical error in the Results section. ‘‘The SAED patterns show several sets of hexagonal patterns, indicating the polycrystalline nature of the sheets within the SAED zone (800 nm)’’ should read: ‘‘The SAED patterns show se...

Shape memory and magnetic properties of a Ni43Co7Mn39Sn11 Heusler polycrystalline alloy were investigated by differential scanning calorimetry, the sample extraction method, and the three-terminal capacitance method. A unique martensitic transformation from the ferromagnetic parent phase to the antiferromagneticlike martensite phase was detected and magnetic-field-induced “reverse” transition w...

Metallic nanowires (Au, Ag, Cu, Ni, Co, and Rh) with an average diameter of 40 nm and a length of 3-5 μm have been fabricated by electrodeposition in the pores of track-etched polycarbonate membranes. Structural characterizations by transmission electron microscopy (TEM) and electron diffraction showed that nanowires of Au, Ag, and Cu are single-crystalline with a preferred [111] orientation, w...

II-VI semiconductors form an important class of opto-electronic materials. CdSe is a promising material for the fabrication of photovoltaic devices. Polycrystalline CdSe films have been deposited onto ultra clean glass substrates by sintering process. The optical band gap of these films was determined by reflectance measurements in wavelength range 400-850 nm. The band gap of these films was ob...

Temperature dependent magnetotransport measurements were performed on polycrystalline and epitaxial chromium dioxide CrO2 nanowires fabricated using the selective-area growth technique. Polycrystalline nanowires showed a negative temperature coefficient of resistivity at low temperatures because of strong grain boundary scattering. The magnetoresistance MR value exhibited a width dependence, re...