We have designed a process-insensitive preamplifier for an optical receiver, fabricated it in several different minimum feature sizes of standard digital CMOS, and demonstrated design scaleability of this analog integrated circuit design. The same amplifier was fabricated in a 1.2 μm and two different 0.8 μm processes through the MOSIS foundry [1]. The amplifier uses a multistage, low-gain-per-...

High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques. Self-powered deep ultraviolet (DUV) photodetectors (PDs) based on BNNSs with Schottky contact structures are designed and fabricated. By connecting the fabricated DUV photodetector to an ammeter, the response strength, response time and r...

In this work, a self-powered photodetector device is fabricated through the integration of a palladium-doped molybdenum disulfide thin film on silicon (Pd-MoS2/Si). The substitution of host Mo atoms with Pd dopants in the MoS2 film is revealed by structural and chemical analysis techniques. Due to the incorporation of Pd atoms into the MoS2 films, the photovoltaic characteristics of the fabrica...

Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly onto interdigitating platinum electrodes serve as catalysts in the following solution-liquid-solid synthesis of quantum nanowires directly on immersed substra...

Ghost images are obtained by correlating the output of a single-pixel (bucket) photodetector—which collects light that has been transmitted through or reflected from an object—with the output from a high spatial-resolution scanning photodetector or photodetector array whose illumination has not interacted with that object. The term “ghost image” is apt because neither detector’s output alone ca...

We propose a solution-processable ultraviolet (UV) photodetector with a pn-heterojunction hybrid photoactive layer (HPL) that is composed of poly-n-vinylcarbazole (PVK) as a p-type polymer and ZnO nanoparticles (NPs) as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by t...

High power photodiodes (PDs) improve signal fidelity in high-speed optoelectronic communications links by eliminating a post amplifier stage, which reduces noise figure, decreases RF insertion loss, and increases spur-free dynamic range [1][2]. Recent efforts have focused on developing photodiodes with high power handling capabilities, and a photodiode with a compression current of 199 mA has b...

A 20-point laser Doppler vibrometer with single photodetector is presented for noncontact dynamic measurement. A 5×4 beam array with various frequency shifts is generated by a 1.55 μm distributed feedback laser and four acousto-optic devices, and illuminating different points on vibrating objects. The reflected beams are coupled into a single-mode fiber by a pigtailed collimator and interfere w...

This paper is a theoretical analysis of mirror tilt in a Michelson interferometer and its effect on the radiant flux over the active area of a rectangular photodetector or image sensor pixel. It is relevant to sensor applications using homodyne interferometry where these opto-electronic devices are employed for partial fringe counting. Formulas are derived for radiant flux across the detector f...

Thin-film photodetectors built from one-dimensional nanostructures have attracted extensive attention due to their significance in basic scientific research and potential technological applications. It is still desirable to develop new materials with a wide response range for application in photodetectors. In this work, a Bi19S27I3 nanorod cluster film has been successfully fabricated on variou...