The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

In conventional WLCSP process, after defining the under bump metal (UBM) layer, a solder ball is dropped in the UBM opening. A subsequent thermal reflow cycle melts the solder ball and cools it in a well defined shape on top of the UBM layer. One draw back of this technology is the fracture or cracking of passivation film that may occur during the solder ball reflow process. The cracks in the p...

The performance of high-efficient crystalline silicon (c-Si) based solar cells is, besides bulk recombination, limited by the recombination losses on both c-Si surfaces. Dangling bonds at the c-Si surface are the defects governing interface recombination irrespective of the overlaying passivation layer (i.e. SiO2, SixNy, a-Si:H). Dangling bonds are also the predominant defects governing recombi...

Semiconductor nanowires have achieved great attention for integration in next-generation electronics. However, for nanowires with diameters comparable to the Debye length, which would generally be required for one-dimensional operation, surface states degrade the device performance and increase the low-frequency noise. In this study, single In(2)O(3) nanowire transistors were fabricated and cha...

10 nanolasers and LED applications. 11 GaAs nanostructures (e.g., nanowires and 12 nanosheets) with high surface-to-volume 13 ratios, however, suffer from high surface 14 state densities and high surface recombina15 tion velocities, which typically limit their 16 optoelectronic device performance. Passiva17 tion of GaAs nanostructures has been widely 18 studied in the literature, including clad...

Zero-valent iron (ZVI) application in groundwater remediation is limited by its vulnerability to passivation, which significantly decreases its surface reactivity. Both biological and chemical processes can potentially passivate ZVI, although the understanding of biological passivation is limited. This study was conducted in bench-scale reactors packed with fresh ZVI or ZVI pre-exposed to nitra...

In situ microscopy provides dynamic information about nucleation, growth and coalescence of islands in real time. We utilised in situ ultra-high vacuum transmission electron microscopy to gain fundamental insights into the oxidation of Cu films. A semiquantitative model, where oxygen surface diffusion is the dominant mechanism for transport, nucleation and growth of the copper oxide, describes ...

In this paper, (NH4)2S and Na2S were used as passivating agent for the sulphuration treatment of GaSb. Although the oxide layer can be removed by both (NH4)2S and Na2S, the etching rate of Na2S was faster than (NH4)2S, which caused the high RMS. After passivation treatment, PL instensity of GaSb increased, however, if the passivation time was too long, PL instensity would decrease. At low tempe...