Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markov...

We examine energy spectra of Si quantum dots embedded in Si0.75Ge0.25 buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses 6 nm, valley splitting is found to be 150 eV. Using the u...

In a tunneling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the transparency of the barriers and the temperature. Gate voltages allow for changes of the relative position of the dot addition energies and the Fermi level of the leads. Here we discuss the two limiting cases: weak and strong coupling in the tunne...

We investigate transport properties of a double quantum dot based a Cooper pair splitter, where the superconducting lead consists of Sr2RuO4. The proposed device can be used to explore the symmetry of the superconducting order parameter in Sr2RuO4 by testing the presence of gapless chiral edge states, which are predicted to exist if the bulk superconductor is described by a chiralp-wave state. ...

We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with quantum dots or threefold stacked quantum dot layers, respectively. A superlinear increase of the quantum dot related photoluminescence is detected with increasin...