نتایج جستجو برای: ohmic contact

تعداد نتایج: 164672  

2004
J. David Schall Donald W. Brenner

By using molecular dynamics simulations, we have accurately determined the true contact area during plastic indentation of materials under an applied in-plane stress. We found that the mean pressure calculated from the true contact area varied slightly with applied pre-stress with higher values in compression than in tension and that the modulus calculated from the true contact area is essentia...

2009
Ioan Popa Ioan Cautil Gheorghe Manolea Florin Ocoleanu Dan Floricau Serghie Vlase

The paper presents an electro-thermal numerical model which can be used for the modelling and optimization of high currents dismountable contacts for dc current. The model is obtained by coupling of the electrokinetic field problem with the thermal field problem. The coupling is carried out by the source term of the differential equation which describes the thermal field. The model allows the c...

2007
Konstantinos Tassis

We follow the ambipolar-diffusion–driven formation and evolution of a fragment in a magnetically supported molecular cloud, until a hydrostatic protostellar core forms at its center. This problem was formulated in Paper I. We determine the density, velocity and magnetic field as functions of space and time, and the contribution of ambipolar diffusion and Ohmic dissipation to the resolution of t...

2005
Chaminda P. Samaranayake Sudhir K. Sastry

Undesirable electrochemical phenomena at electrode|solution interfaces during ohmic heating can be avoided or effectively inhibited by choosing an appropriate electrode material. We attempted to understand the electrochemical behavior of four types of electrode materials: titanium, stainless steel, platinized-titanium, and graphite at pH 3.5, 5.0, and 6.5. The electrodes were examined comparati...

2008
R. HIND M. SCHWARZ

There exists a canonical symplectic structure on the cotangent bundle of a differentiable manifold and similarly a canonical contact structure on the positive projectivization of the cotangent bundle under the scaling R action. Given a Riemannian (or Finsler) metric on the original manifold, this contact structure is contactomorphic to the contact structure determined by the metric on the unit ...

2004
Konstantinos Tassis

The problem of the late accretion phase of the evolution of an axisymmetric, isothermal magnetic disk surrounding a forming star has been formulated in a companion paper. The “central sink approximation” is used to circumvent the problem of describing the evolution inside the opaque central region for densities greater than 10 cm and radii smaller than a few AUs. Only the electrons are assumed ...

2003
R. Rosenfelder

Following the Caldeira-Leggett approach to describe dissipative quantum systems the structure function for a harmonic oscillator with Ohmic dissipation is evaluated by an analytic continuation from euclidean to real time. The analytic properties of the Fourier transform of the structure function with respect to the energy transfer (the “characteristic function”) are studied and utilized. In the...

2011
Alessia Frazzetto Filippo Giannazzo Raffaella Lo Nigro Salvatore Di Franco Corrado Bongiorno Mario Saggio Edoardo Zanetti Vito Raineri Fabrizio Roccaforte

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements ...

2006
E. Stern G. Cheng J. F. Klemic E. Broomfield

A comparison of methods to create Ohmic contacts to semiconductor nanowires NWs and carbon nanotubes CNTs is presented. A Ni/Au lift-off metallization was used to contact GaN and In2O3 NWs and CNTs using electron-beam e-beam or optical lithography. In order to render the metal-semiconductor contacts Ohmic, e-beam-processed devices are found to require a postfabrication, high-temperature anneal,...

2004
E. Kaminska A. Piotrowska A. Kuchuk J. Szade A. Winiarski J. Jasinski

The fabrication procedure of transparent n+-ZnO–p-GaN ohmic junctions has been described. The influence of consecutive technological steps on the electrical, structural and electronic properties of the junction has been studied. The results indicate that the predeposition of Au nucleation film plays a crucial role for the final contact properties. The ohmic behaviour is explained in terms of fo...

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