Nanopatterned Pt by Ga+ focused ion beam (FIB) decomposition of an organometallic precursor forms low resistance ohmic contacts on 40–70 nm diameter GaN nanowires (NWs) grown by thermal reaction of Ga2O3 and NH3. With no intentional doping, the wires are presumed to be n-type. Thus, the linear I-V behavior is surprising since evaporated Pt usually forms Schottky barriers on n-GaN. Ohmic behavio...

hadamard (or complete $cat(0)$) spaces are complete, non-positive curvature, metric spaces. here, we prove a nonlinear ergodic theorem for continuous non-expansive semigroup in these spaces as well as a strong convergence theorem for the commutative case. our results extend the standard non-linear ergodic theorems for non-expansive maps on real hilbert spaces, to non-expansive maps on had...

We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subse...

The nonpathogenic phenotype of the live rabies virus (RV) vaccine SPBNGAN is determined by an Arg-->Glu exchange at position 333 in the glycoprotein, designated GAN. We recently showed that after several passages of SPBNGAN in mice, an Asn-->Lys mutation arose at position 194 of GAN, resulting in GAK, which was associated with a reversion to the pathogenic phenotype. Because an RV vaccine candi...

Converting directly real-world images into high-quality anime styles using generative adversarial networks is one of the research hotspots in computer vision. The current popular AnimeGAN and WhiteBox are problematic when distortion image features, loss details on lines textures concerned. To address these problems, we introduce AnimationGAN. preserve images, use linear bottlenecks residual net...

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeate...

Phase pure cubic (c-) GaN/AlGaN heterostructures on 3CSiC free standing (001) substrates have successfully been developed. Almost complete (100%) phase pure c-GaN films are achieved with 2-nm surface roughness on 3C-SiC substrate and stoichiometric growth conditions. The polarization effect in c-GaN/AlGaN has been evaluated, based on measuring the transition energy of GaN/AlGaN quantum wells (Q...