نتایج جستجو برای: nitride aluminum

تعداد نتایج: 64159  

2006
S. Schmult M. J. Manfra A. M. Sergent A. Punnoose H. T. Chou D. Goldhaber-Gordon R. J. Molnar

S. Schmult *, , M. J. Manfra, A. M. Sergent, A. Punnoose, H. T. Chou, D. Goldhaber-Gordon, and R. J. Molnar 1 Bell Laboratories, Lucent Technologies, 600 Mountain Ave, Murray Hill, NJ 07974, USA 2 Department of Applied Physics, Stanford University, Stanford, CA 94305, USA 3 Department of Physics, Stanford University, Stanford, CA 94305, USA 4 MIT Lincoln Laboratory, 244 Wood Street, Lexington, ...

2017
R. Kudrawiec M. Rudziński M. Gladysiewicz L. Janicki P. R. Hageman W. Strupiński J. Misiewicz R. Kucharski M. Zając R. Doradziński R. Dwiliński

2017
S. Schöche Junxia Shi A. Boosalis P. Kühne C. M. Herzinger John A. Woollam W. J. Schaff L. F. Eastman Tino Hofmann J. A. Woollam M. Schubert T. Hofmann

2005
Peter McGovern Paul J. Tasker J. Powell K. P. Hilton J. L. Glasper R. S. Balmer T. Martin M. J. Uren

AlGaN/GaN HFET’s have been analyzed under DC and RF Stimulus in an attempt to analyze the phenomenon of DC-RF dispersion. DC pulsed I-V measurements were performed where the pulse “off” state was set to different bias points, to simulate a class A bias condition at various drain voltages. RF timedomain waveform measurements were also performed. The I-V measurements exhibited the common problem ...

2011
Priya Vashishta Rajiv K. Kalia Aiichiro Nakano José Pedro Rino

of mechanical and thermal properties of crystalline and amorphous aluminum nitride Priya Vashishta, Rajiv K. Kalia, Aiichiro Nakano, José Pedro Rino, and Collaboratory for Advanced Computing and Simulations Department of Chemical Engineering and Materials Science, Department of Physics and Astronomy, and Department of Computer Science, University of Southern California, Los Angeles, California ...

2016
Bin-Hao Chen Hsiu-Hao Hsu David T.W. Lin

We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented ...

Journal: :Optics express 2015
Hojoong Jung Menno Poot Hong X Tang

We propose and demonstrate a dispersion control technique by combination of different waveguide cross sections in an aluminum nitride micro-ring resonator. Narrow and wide waveguides with normal and anomalous dispersion, respectively, are linked with tapering waveguides and enclosed in a ring resonator to produce a total dispersion near zero. The mode-coupling in multimoded waveguides is also e...

Journal: :Optics letters 2013
Hojoong Jung Chi Xiong King Y Fong Xufeng Zhang Hong X Tang

Aluminum nitride (AlN) is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high-quality-factor AlN microring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, fre...

Journal: :Journal of the American Ceramic Society 1994

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