The analytical modeling of nanoscale Double-Gate MOSFETs (DG) requires generally several necessary simplifying assumptions to lead to compact expressions of current-voltage characteristics for nanoscale CMOS circuits design. Further, progress in the development, design and optimization of nanoscale devices necessarily require new theory and modeling tools in order to improve the accuracy and th...

The performance of field effect transistors comprised of a zigzag graphene nanoribbon that is symmetrically doped with boron nitride (BN) as a channel material, is numerically studied for the first time. The device merit for digital applications is investigated in terms of the on-, the off- and the on/off-current ratio. Due to the strong effect of the substrate roughness on the performance of g...

In this article, we investigate the effect of variability in p-type nanowire tunnel FET (TFET) using quantum mechanical transport simulations. The simulations have been carried out Nano Electronics Simulation Software (NESS) from University Glasgow. Random discrete dopants (RDDs) and work-function variations (WFV) investigated Our statistical reveal that key figures merit (FoMs) such as current...

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic ...

Thermoelectric materials can convert waste heat into usable power and thus have great potential as an energy technology. However, the thermoelectric efficiency of a material is quantified by its figure of merit, which has historically remained stubbornly low. One possible avenue towards increasing the figure of merit is through the use of low-dimensional nanograined materials. In such a system ...

The quantum transport through Tour Wires (TWs) was studied at room temperature and high temperature range using nonequilibrium Green’s function (NEGF) formalism combined with extended Huckel theory (EHT). AuTour Wire-Au junctions were constructed with functional groups NO2 and NH2.The influence of the temperature effect on the transport characteristics have been emphasized, and the result shows...

The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led overestimated current levels the subthreshold regime. In order correct this issue and enhance capabilities type simulator, we discuss paper two alternative self-consistent solutions focusing on different parts simulation flow. first solution reformulates probability computation by modulat...

We present density functional theory (DFT) based non-equilibrium Green’s function (NEGF) calculations for the conductance through a nitrobenzene molecule, which is anchored by pyridil-groups to Au electrodes. This work is building up on earlier theoretical studies where quantum interference effects have been identified both in qualitative tight-binding (TB) and in DFT descriptions for the same ...