Complementary metal-oxide semiconductor (CMOS) technology has been the industry standard to implement Very Large Scale Integrated (VLSI) devices for the last two decades. Due to the consequences of miniaturization of such devices (i.e. increasing switching speeds, increasing complexity and decreasing power consumption), it is essential to replace them with a new technology. Quantum-dot c...

based on citation analysis, this work describes the growth and interdisciplinary patterns of nanoscale research in iran. it covers all the iranian isi papers on nanoscience and nanotechnology indexed in the isi databases in 2008 and surveys the corresponding data from the beginning to 2007. moreover, in an international context, a brief comparison is made between our data and those of other cou...

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

Negative Bias Temperature Instability(NBTI) has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. As the Integrated Circuits (IC) density keeps on increasing with the scaling of CMOS devices in each successive technology generation, stress analysis or reliability concerns mainly Negative Bias ...

We investigate measurement of electron transport in quantum dot systems by using single-electron transistor as a noninvasive detector. It is demonstrated that such a detector can operate in the " negative-result measurement " regime. In this case the measured current is not distorted, providing that it is a non-coherent one. For a coherent transport, however, the possibility of observing a part...

nanotechnology are currently quite popular in both the scientific and the general press. These intermediate-length structures are intriguing because generally in the nanometer region, almost all physical and chemical properties of systems become size-dependent. For example, although the color of a piece of gold remains golden as it reduces from inches to millimeters to microns, the color change...

This paper proposes a two-write and two-read (2W2R) bit-cell for a multi-port (MP) SRAM design to improve the static noise margin (SNM) and solve the write-disturb issues of nanoscale CMOS technologies. Using an additional Y -access MOS (column-direction access transistor), the 2W2R MP SRAM adopts a scheme of combining the row access transistor and sharing write bit-line with an adjacent bit ce...

PACS. 73.63.-b – Electronic transport in mesoscopic or nanoscale materials and structures.. PACS. 73.23.Hk – Coulomb blockade; single-electron tunneling. PACS. 85.85.+j – Micro-and nano-electromechanical systems (MEMS/NEMS) and devices. Abstract. – Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single electron transistor and coherent t...

The semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors...